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Impact of inside spacer process on fully self-aligned 250 GHz SiGe: C HBTs reliability performances: a-Si vs. nitride.
Malick Diop
Nathalie Revil
M. Marin
Frederic Monsieur
Pascal Chevalier
Gérard Ghibaudo
Published in:
Microelectron. Reliab. (2008)
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