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G. Pananakakis
Publication Activity (10 Years)
Years Active: 2001-2012
Publications (10 Years): 0
Top Topics
Nm Technology
Save Energy
Power Consumption
Battery Life
Top Venues
ESSDERC
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Publications
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Quentin Hubert
,
Carine Jahan
,
Alain Toffoli
,
Gabriele Navarro
,
S. Chandrashekar
,
Pierre Noe
,
Veronique Sousa
,
Luca Perniola
,
J.-F. Nodin
,
A. Persico
,
S. Maitrejean
,
A. Roule
,
E. Henaff
,
M. Tessaire
,
P. Zuliani
,
R. Annunziata
,
Gilles Reimbold
,
G. Pananakakis
,
B. De Salvo
Carbon-doped Ge2Sb2Te5 phase-change memory devices featuring reduced RESET current and power consumption.
ESSDERC
(2012)
Frederic Monsieur
,
E. Vincent
,
Vincent Huard
,
S. Bruyère
,
David Roy
,
Thomas Skotnicki
,
G. Pananakakis
,
Gérard Ghibaudo
On the role of holes in oxide breakdown mechanism in inverted nMOSFETs.
Microelectron. Reliab.
43 (8) (2003)
Frederic Monsieur
,
E. Vincent
,
David Roy
,
S. Bruyère
,
G. Pananakakis
,
Gérard Ghibaudo
Gate oxide Reliability assessment optimization.
Microelectron. Reliab.
42 (9-11) (2002)
Frederic Monsieur
,
E. Vincent
,
G. Pananakakis
,
Gérard Ghibaudo
Wear-out, breakdown occurrence and failure detection in 18-25 Å ultrathin oxides.
Microelectron. Reliab.
41 (7) (2001)
Frederic Monsieur
,
E. Vincent
,
David Roy
,
S. Bruyère
,
G. Pananakakis
,
Gérard Ghibaudo
Determination of Dielectric Breakdown Weibull Distribution Parameters Confidence Bounds for Accurate Ultrathin Oxide Reliability Predictions.
Microelectron. Reliab.
41 (9-10) (2001)
Raphael Clerc
,
Alessandro S. Spinelli
,
Gérard Ghibaudo
,
Charles Leroux
,
G. Pananakakis
Electrical characterization and quantum modeling of MOS capacitors with ultra-thin oxides (1.4-3 nm).
Microelectron. Reliab.
41 (7) (2001)