Carbon-doped Ge2Sb2Te5 phase-change memory devices featuring reduced RESET current and power consumption.
Quentin HubertCarine JahanAlain ToffoliGabriele NavarroS. ChandrashekarPierre NoeVeronique SousaLuca PerniolaJ.-F. NodinA. PersicoS. MaitrejeanA. RouleE. HenaffM. TessaireP. ZulianiR. AnnunziataGilles ReimboldG. PananakakisB. De SalvoPublished in: ESSDERC (2012)