Carbon-doped Ge2Sb2Te5 phase-change memory devices featuring reduced RESET current and power consumption.

Quentin Hubert Carine Jahan Alain Toffoli Gabriele Navarro S. Chandrashekar Pierre Noe Veronique Sousa Luca Perniola J.-F. Nodin A. Persico S. Maitrejean A. Roule E. Henaff M. Tessaire P. Zuliani R. Annunziata Gilles Reimbold G. Pananakakis B. De Salvo

Published in: ESSDERC (2012)

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