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Carrier injection efficiency for the reliability study of 3.5-1.2 nm thick gate-oxide CMOS technologies.

Alain BravaixC. TrapesDidier GoguenheimNathalie RevilE. Vincent
Published in: Microelectron. Reliab. (2003)
Keyphrases
  • empirical studies
  • experimental study
  • mathematical analysis
  • cmos technology
  • neural network
  • data mining
  • statistical analysis
  • nano scale
  • leakage current