Sylvain Barraud

Publication Activity (10 Years)

Years Active: 2011-2024
Publications (10 Years): 14

Top Topics

Silicon Dioxide

Quantum Computing

Top Venues

Microelectron. Reliab.

Publications

Ancelin Salerno, Sylvain Barraud
Evaluation and implementation of High-Dimensionnal Computing for gesture recognition using sEMG signals. ICCAD (2024)
Michelly de Souza, Sylvain Barraud, Mikaël Cassé, Maud Vinet, Olivier Faynot, Marcelo Antonio Pavanello
Experimental Assessment of Variability in Junctionless Nanowire nMOS Transistors. ESSDERC (2021)
R. Midahuen, Bernard Previtali, C. Fontelaye, G. Nonglaton, V. Stambouli, Sylvain Barraud
Wafer-scale fabrication of biologically sensitive Si nanowire FET: from pH sensing to electrical detection of DNA hybridization. ESSDERC (2021)
R. Midahuen, Bernard Previtali, C. Fontelaye, G. Nonglaton, Sylvain Barraud, V. Stambouli
Wafer-scale fabrication of biologically sensitive Si nanowire FET: from pH sensing to electrical detection of DNA hybridization. ESSCIRC (2021)
Renan Trevisoli, Rodrigo Doria, Sylvain Barraud, Marcelo Antonio Pavanello
Compact Analytical Model for Trap-Related Low Frequency Noise in Junctionless Transistors. ESSDERC (2019)
Louis Hutin, B. Bertrand, Romain Maurand, A. Crippa, Matias Urdampilleta, Y. J. Kim, A. Amisse, H. Bohuslavskyi, L. Bourdet, Sylvain Barraud, Xavier Jeh, Yann-Michel Niquet, Marc Sanquer, C. Bauerle, T. Meunier, Silvano De Franceschi, Maud Vinet
Si MOS technology for spin-based quantum computing. ESSDERC (2018)
Antoine Laurent, Xavier Garros, Sylvain Barraud, J. Pelloux-Prayer, Mikaël Cassé, Fred Gaillard, X. Federspiel, David Roy, E. Vincent, Gérard Ghibaudo
Performance & reliability of 3D architectures (πfet, Finfet, Ωfet). IRPS (2018)
Maud Vinet, Louis Hutin, B. Bertrand, H. Bohuslavskyi, A. Corna, A. Amisse, A. Crippa, L. Bourdet, Romain Maurand, Sylvain Barraud, Matias Urdampilleta, C. Bauerle, Marc Sanquer, Xavier Jehl, Yann-Michel Niquet, S. De Franceschi, T. Meunier
Towards scalable silicon quantum computing. DRC (2018)
Renan Trevisoli Doria, Rodrigo Trevisoli Doria, Michelly de Souza, Marcelo Antonio Pavanello, Sylvain Barraud
A new method for junctionless transistors parameters extraction. ESSDERC (2017)
Louis Hutin, B. Bertrand, Romain Maurand, Matias Urdampilleta, B. Jadot, H. Bohuslavskyi, L. Bourdet, Yann-Michel Niquet, Xavier Jehl, Sylvain Barraud, C. Bauerle, T. Meunier, Marc Sanquer, Silvano De Franceschi, Maud Vinet
SOI CMOS technology for quantum information processing. ICICDT (2017)
Bruna Cardoso Paz, Renan Trevisoli Doria, Mikaël Cassé, Sylvain Barraud, Gilles Reimbold, Maud Vinet, Olivier Faynot, Marcelo Antonio Pavanello
Harmonic distortion analysis of triple gate SOI nanowire MOSFETS down to 100 K. Microelectron. Reliab. 79 (2017)
R. Lavieville, Theano A. Karatsori, Christoforos G. Theodorou, Sylvain Barraud, C. A. Dimitriadis, Gérard Ghibaudo
Statistical characterization of drain current local and global variability in sub 15nm Si/SiGe Trigate pMOSFETs. ESSDERC (2016)
Bruna Cardoso Paz, Marcelo Antonio Pavanello, Mikaël Cassé, Sylvain Barraud, Gilles Reimbold, Maud Vinet, Olivier Faynot
Analog performance of strained SOI nanowires down to 10K. ESSDERC (2016)
Bruna Cardoso Paz, Mikaël Cassé, Sylvain Barraud, Gilles Reimbold, Olivier Faynot, F. Avila-Herrera, Antonio Cerdeira, Marcelo Antonio Pavanello
Drain current model for short-channel triple gate junctionless nanowire transistors. Microelectron. Reliab. 63 (2016)
J. Pelloux-Prayer, Mikaël Cassé, Francois Triozon, Sylvain Barraud, Yann-Michel Niquet, J.-L. Rouviere, Olivier Faynot, Gilles Reimbold
Strain effect on mobility in nanowire MOSFETs down to 10nm width: Geometrical effects and piezoresistive model. ESSDERC (2015)
Mukta Singh Parihar, Fan Yu Liu, Carlos Navarro, Sylvain Barraud, Maryline Bawedin, Irina Ionica, Abhinav Kranti, Sorin Cristoloveanu
Back-gate effects and detailed characterization of junctionless transistor. ESSDERC (2015)
Remi Coquand, Sylvain Barraud, Mikaël Cassé, Masahiro Koyama, Virginie Maffini-Alvaro, Marie-Pierre Samson, Lucie Tosti, Xavier Mescot, Gérard Ghibaudo, Stéphane Monfray, Frédéric Boeuf, Olivier Faynot, Barbara De Salvo
Low-temperature transport characteristics in SOI and sSOI nanowires down to 8nm width: Evidence of IDS and mobility oscillations. ESSDERC (2013)
Masahiro Koyama, Mikaël Cassé, Remi Coquand, Sylvain Barraud, Gérard Ghibaudo, Hiroshi Iwai, Gilles Reimbold
Influence of device scaling on low-frequency noise in SOI tri-gate N- and p-type Si nanowire MOSFETs. ESSDERC (2013)
Masahiro Koyama, Mikaël Cassé, Remi Coquand, Sylvain Barraud, Hiroshi Iwai, Gérard Ghibaudo, Gilles Reimbold
Study of carrier transport in strained and unstrained SOI tri-gate and omega-gate Si-nanowire MOSFETs. ESSDERC (2012)
Veeresh Deshpande, Sylvain Barraud, Xavier Jehl, Romain Wacquez, Maud Vinet, Remi Coquand, B. Roche, B. Voisin, Francois Triozon, C. Vizioz, L. Tosti, Bernard Previtali, P. Perreau, T. Poiroux, Marc Sanquer, Olivier Faynot
Scaling of Trigate nanowire (NW) MOSFETs Down to 5 nm Width: 300 K transition to Single Electron Transistor, challenges and opportunities. ESSDERC (2012)
Kiichi Tachi, Sylvain Barraud, Kuniyuki Kakushima, Hiroshi Iwai, Sorin Cristoloveanu, Thomas Ernst
Comparison of low-temperature electrical characteristics of gate-all-around nanowire FETs, Fin FETs and fully-depleted SOI FETs. Microelectron. Reliab. 51 (5) (2011)