Login / Signup

Study of carrier transport in strained and unstrained SOI tri-gate and omega-gate Si-nanowire MOSFETs.

Masahiro KoyamaMikaël CasséRemi CoquandSylvain BarraudHiroshi IwaiGérard GhibaudoGilles Reimbold
Published in: ESSDERC (2012)
Keyphrases
  • data sets
  • neural network
  • statistical analysis
  • theoretical framework
  • simulation study
  • factors affecting
  • real world
  • genetic algorithm
  • computer vision
  • learning environment
  • high speed
  • x ray
  • high density
  • nano scale