Hiroshi Iwai

Publication Activity (10 Years)

Years Active: 1987-2023
Publications (10 Years): 13

Top Topics

Leakage Current

Field Effect Transistors

Gate Dielectrics

Silicon Dioxide

Top Venues

Microelectron. Reliab.

Sci. China Inf. Sci.

IEICE Trans. Commun.

Publications

Hiroshi Iwai
Development of RFCMOS Technologies in the 1990s in Toshiba. ASICON (2023)
Hiroshi Iwai
NMOS LSI Development from 1970's to the beginning of 1980's. ASICON (2021)
Toshiro Hiramoto, K. Satoh, Tomoko Matsudai, Wataru Saito, Kuniyuki Kakushima, Takuya Hoshii, K. Furukawa, M. Watanabe, N. Shigyo, Hitoshi Wakabayashi, Kazuo Tsutsui, T. Sarava, Hiroshi Iwai, Atsushi Ogura, Shinichi Nishizawa, Ichiro Omura, H. Ohashi, K. Itou, T. Takakura, M. Fukui, S. Suzuki, Ken Takeuchi, Masanori Tsukuda, Y. Numasawa
Switching of 3300V Scaled IGBT by 5V Gate Drive. ASICON (2019)
Yiming Lei, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Masayuki Furuhashi, Shingo Tomohisa, Satoshi Yamakawa, Kuniyuki Kakushima
/4H-SiC Interface properties by post-metallization annealing. Microelectron. Reliab. 84 (2018)
Yiming Lei, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Masayuki Furuhashi, Shingo Tomohisa, Satoshi Yamakawa, Kuniyuki Kakushima
Effect of lanthanum silicate interface layer on the electrical characteristics of 4H-SiC metal-oxide-semiconductor capacitors. Microelectron. Reliab. 84 (2018)
Kuniyuki Kakushima, Takuya Hoshii, M. Watanabe, N. Shizyo, K. Furukawa, Takuya Saraya, T. Takakura, K. Itou, M. Fukui, S. Suzuki, Ken Takeuchi, Iriya Muneta, Hitoshi Wakabayashi, Y. Numasawa, Atsushi Ogura, Shinichi Nishizawa, Kazuo Tsutsui, Toshiro Hiramoto, H. Ohashi, Hiroshi Iwai
New Methodology for Evaluating Minority Carrier Lifetime for Process Assessment. VLSI Circuits (2018)
Akito Sasaki, Hideyuki Oozu, Miho Nakamura, Katsuaki Aoki, Yoshinori Kataoka, Syuichi Saito, Kumpei Kobayashi, Wei Li, Kuniyuki Kakushima, Kazuo Tsutsui, Hiroshi Iwai
electrode for lithium ion secondary batteries. Microelectron. Reliab. 68 (2017)
Kazuo Tsutsui, Kuniyuki Kakushima, Takuya Hoshii, A. Nakajima, Shinichi Nishizawa, Hitoshi Wakabayashi, Iriya Muneta, K. Sato, Tomoko Matsudai, Wataru Saito, Takuya Saraya, K. Itou, M. Fukui, S. Suzuki, M. Kobayashi, T. Takakura, Toshiro Hiramoto, Atsushi Ogura, Y. Numasawa, Ichiro Omura, H. Ohashi, Hiroshi Iwai
3D scaling for insulated gate bipolar transistors (IGBTs) with low Vce(sat). ASICON (2017)
Ru Huang, Hiroshi Iwai, Cor Claeys, Simon Deleonibus, Runsheng Wang
Editor's note. Sci. China Inf. Sci. 59 (6) (2016)
Hiroshi Iwai
End of the downsizing and world after that. ESSDERC (2016)
M. S. Hadi, Nobuyuki Sugii, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Kuniyuki Kakushima
Si bottom electrodes. Microelectron. Reliab. 63 (2016)
J. Chen, Takamasa Kawanago, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, D. Nohata, Hiroshi Nohira, Kuniyuki Kakushima
gate dielectrics for AlGaN/GaN HEMT. Microelectron. Reliab. 60 (2016)
J. Chen, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Kuniyuki Kakushima
Poly-Si gate electrodes for AlGaN/GaN HEMT with high reliability and low gate leakage current. Microelectron. Reliab. 63 (2016)
Wei Li, Akito Sasaki, Hideyuki Oozu, Katsuaki Aoki, Kuniyuki Kakushima, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kenji Natori, Hiroshi Iwai
Electron transport mechanism of tungsten trioxide powder thin film studied by investigating effect of annealing on resistivity. Microelectron. Reliab. 55 (2) (2015)
Wei Li, Akito Sasaki, Hideyuki Oozu, Katsuaki Aoki, Kuniyuki Kakushima, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kenji Natori, Hiroshi Iwai
Improvement of charge/discharge performance for lithium ion batteries with tungsten trioxide electrodes. Microelectron. Reliab. 55 (2) (2015)
Xuan Feng, Hei Wong, B. L. Yang, Shurong Dong, Hiroshi Iwai, Kuniyuki Kakushima
stacked gate dielectric. Microelectron. Reliab. 54 (6-7) (2014)
Chunmeng Dou, Dennis Lin, Abhitosh Vais, Tsvetan Ivanov, Han-Ping Chen, Koen Martens, Kuniyuki Kakushima, Hiroshi Iwai, Yuan Taur, Aaron Thean, Guido Groeseneken
As MOS capacitors from capacitance-voltage characteristics measured at various temperatures. Microelectron. Reliab. 54 (4) (2014)
Chunmeng Dou, Tomoya Shoji, Kazuhiro Nakajima, Kuniyuki Kakushima, Parhat Ahmet, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kenji Natori, Hiroshi Iwai
Characterization of interface state density of three-dimensional Si nanostructure by charge pumping measurement. Microelectron. Reliab. 54 (4) (2014)
Tsutomu Sakata, Atsushi Yamamoto, Koichi Ogawa, Hiroshi Iwai, Jun-ichi Takada, Kei Sakaguchi
A Spatial Fading Emulator for Evaluation of MIMO Antennas in a Cluster Environment. IEICE Trans. Commun. (10) (2014)
Yan Wu, Hiroyuki Hasegawa, Kuniyuki Kakushima, Kenji Ohmori, Takanobu Watanabe, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, Kazuo Tsutsui, Yoshinori Kataoka, Kenji Natori, Keisaku Yamada, Hiroshi Iwai
A novel hetero-junction Tunnel-FET using Semiconducting silicide-Silicon contact and its scalability. Microelectron. Reliab. 54 (5) (2014)
Ryuji Tomita, Hidehiko Kimura, M. Yasuda, K. Maeda, S. Ueno, T. Tomizawa, Y. Kunimune, H. Nakamura, M. Moritoki, Hiroshi Iwai
Formation of high resistivity phases of nickel silicide at small area. Microelectron. Reliab. 53 (5) (2013)
Takamasa Kawanago, Kuniyuki Kakushima, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kenji Natori, Hiroshi Iwai
Advantage of TiN Schottky gate over conventional Ni for improved electrical characteristics in AlGaN/GaN HEMT. ESSDERC (2013)
Ryuji Tomita, Hidehiko Kimura, M. Yasuda, K. Maeda, S. Ueno, T. Tonegawa, T. Fujimoto, M. Moritoki, Hiroshi Iwai
Improvement on sheet resistance uniformity of nickel silicide by optimization of silicidation conditions. Microelectron. Reliab. 53 (5) (2013)
Daiki Maehara, Ryota Akai, Gia Khanh Tran, Kei Sakaguchi, Seiichi Sampei, Kiyomichi Araki, Hiroshi Iwai
Experiment on battery-less sensor activation via multi-point wireless energy transmission. PIMRC (2013)
Masahiro Koyama, Mikaël Cassé, Remi Coquand, Sylvain Barraud, Gérard Ghibaudo, Hiroshi Iwai, Gilles Reimbold
Influence of device scaling on low-frequency noise in SOI tri-gate N- and p-type Si nanowire MOSFETs. ESSDERC (2013)
M. Mamatrishat, T. Kubota, T. Seki, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Hiroshi Iwai
/Si MOS capacitors. Microelectron. Reliab. 52 (6) (2012)
Masahiro Koyama, Mikaël Cassé, Remi Coquand, Sylvain Barraud, Hiroshi Iwai, Gérard Ghibaudo, Gilles Reimbold
Study of carrier transport in strained and unstrained SOI tri-gate and omega-gate Si-nanowire MOSFETs. ESSDERC (2012)
Takamasa Kawanago, Kuniyuki Kakushima, Parhat Ahmet, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Kazuo Tsutsui, Kenji Natori, Takeo Hattori, Hiroshi Iwai
(100)- and (110)-oriented nMOSFETs with highly scaled EOT in La-silicate/Si interface for multi-gate architecture. ESSDERC (2012)
Chunmeng Dou, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Hiroshi Iwai
based ReRAM cell incorporated with Si buffer layer. Microelectron. Reliab. 52 (4) (2012)
Enrique Miranda, Takamasa Kawanago, Kuniyuki Kakushima, Jordi Suñé, Hiroshi Iwai
Analysis and modeling of the gate leakage current in advanced nMOSFET devices with severe gate-to-drain dielectric breakdown. Microelectron. Reliab. 52 (9-10) (2012)
B. L. Yang, Hei Wong, Kuniyuki Kakushima, Hiroshi Iwai
stacked gate dielectric. Microelectron. Reliab. 52 (8) (2012)
S.-L. Siu, Wing-Shan Tam, Hei Wong, Chi-Wah Kok, K. Kakusima, Hiroshi Iwai
Influence of multi-finger layout on the subthreshold behavior of nanometer MOS transistors. Microelectron. Reliab. 52 (8) (2012)
Hiroshi Iwai, Kenji Natori, Kenji Shiraishi, Jun-ichi Iwata, Atsushi Oshiyama, Keisaku Yamada, Kenji Ohmori, Kuniyuki Kakushima, Parhat Ahmet
Si nanowire FET and its modeling. Sci. China Inf. Sci. 54 (5) (2011)
D. Zade, Soshi Sato, Kuniyuki Kakushima, A. Srivastava, Parhat Ahmet, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Chandan Kumar Sarkar, Hiroshi Iwai
gated nMOSFETs on low-frequency noise. Microelectron. Reliab. 51 (4) (2011)
Soshi Sato, Kuniyuki Kakushima, Parhat Ahmet, Kenji Ohmori, Kenji Natori, Keisaku Yamada, Hiroshi Iwai
Structural advantages of rectangular-like channel cross-section on electrical characteristics of silicon nanowire field-effect transistors. Microelectron. Reliab. 51 (5) (2011)
Kiichi Tachi, Sylvain Barraud, Kuniyuki Kakushima, Hiroshi Iwai, Sorin Cristoloveanu, Thomas Ernst
Comparison of low-temperature electrical characteristics of gate-all-around nanowire FETs, Fin FETs and fully-depleted SOI FETs. Microelectron. Reliab. 51 (5) (2011)
Gia Khanh Tran, Nguyen Dung Dao, Kei Sakaguchi, Kiyomichi Araki, Hiroshi Iwai, Tsutomu Sakata, Koichi Ogawa
Performance Analysis of MIMO Schemes in Residential Home Environment via Wideband MIMO Propagation Measurement. IEICE Trans. Fundam. Electron. Commun. Comput. Sci. (4) (2010)
Kuniyuki Kakushima, K. Okamoto, T. Koyanagi, M. Kouda, Kiichi Tachi, Takamasa Kawanago, J. Song, Parhat Ahmet, Hiroshi Nohira, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai
/Ce-silicate gate dielectrics. Microelectron. Reliab. 50 (3) (2010)
Hiroshi Iwai, Kei Sakaguchi, Tsutomu Sakata, Atsushi Yamamoto
Performance Evaluation of Spatial Correlation Characteristics for Handset Antennas Using Spatial Fading Emulator Based on Clarke's Model. IEICE Trans. Commun. (10) (2010)
Yusuke Kobayashi, Kuniyuki Kakushima, Parhat Ahmet, V. Ramgopal Rao, Kazuo Tsutsui, Hiroshi Iwai
Analysis of dependence of short-channel effects in double-gate MOSFETs on channel thickness. Microelectron. Reliab. 50 (3) (2010)
Kuniyuki Kakushima, Kiichi Tachi, Parhat Ahmet, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai
gate dielectrics. Microelectron. Reliab. 50 (6) (2010)
Hiroshi Shimomura, Kuniyuki Kakushima, Hiroshi Iwai
Equivalent Noise Temperature Representation for Scaled MOSFETs. IEICE Trans. Electron. (10) (2010)
Hiroshi Shimomura, Kuniyuki Kakushima, Hiroshi Iwai
Effect of High Frequency Noise Current Sources on Noise Figure for Sub-50 nm Node MOSFETs. IEICE Trans. Electron. (5) (2010)
Sik-Lam Siu, Hei Wong, Wing-Shan Tam, Kuniyuki Kakushima, Hiroshi Iwai
Subthreshold parameters of radio-frequency multi-finger nanometer MOS transistors. Microelectron. Reliab. 49 (4) (2009)
Parhat Ahmet, Kentaro Nakagawa, Kuniyuki Kakushima, Hiroshi Nohira, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai
gate stack. Microelectron. Reliab. 48 (11-12) (2008)
Hiroshi Iwai, Tsutomu Sakata, Atsushi Yamamoto, Kei Sakaguchi
3-D Angular Spectrum Measurements at 5 GHz in a Residential Two-Story House. IEICE Trans. Commun. (9) (2007)
Koichi Ogawa, Satoru Amari, Hiroshi Iwai, Atsushi Yamamoto
Effects of Received Power Imbalance on the Channel Capacity of a Handset MIMO. PIMRC (2007)
Joel Molina Reyes, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai
gated MOSFET structures after electrical stress. IEICE Electron. Express 4 (6) (2007)
Yusuke Kobayashi, C. Raghunathan Manoj, Kazuo Tsutsui, Venkanarayan Hariharan, Kuniyuki Kakushima, V. Ramgopal Rao, Parhat Ahmet, Hiroshi Iwai
Parasitic Effects in Multi-Gate MOSFETs. IEICE Trans. Electron. (10) (2007)
Gia Khanh Tran, Nguyen Dung Dao, Kei Sakaguchi, Kiyomichi Araki, Hiroshi Iwai, Tsutomu Sakata, Koichi Ogawa
Performance Analysis of MIMO-OFDM Systems using Indoor Wideband MIMO Channel Measurement Data. VTC Spring (2006)
Jin-Aun Ng, Nobuyuki Sugii, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Takeo Hattori, Hiroshi Iwai
nMISFETs after post deposition annealing. IEICE Electron. Express 3 (13) (2006)
Enrique Miranda, Joel Molina Reyes, Y. Kim, Hiroshi Iwai
gate dielectrics using progressive electrical stress. Microelectron. Reliab. 45 (9-11) (2005)
Nguyen Dung Dao, Hai-Yeow-Eugene Chua, Kei Sakaguchi, Kiyomichi Araki, Hiroshi Iwai, Tsutomu Sakata, Koichi Ogawa
Measurements on Area Coverage of 5GHZ Band MIMO-OFDM System in Residential Home Environment. PIMRC (2005)
Yongshik Kim, Kunihiro Miyauchi, Shun'ichiro Ohmi, Kazuo Tsutsui, Hiroshi Iwai
thin films grown by E-beam evaporation. Microelectron. J. 36 (1) (2005)
Jamil Kawa, Yuhua Cheng, Hiroshi Iwai, Richard Goering, Michael Campbell, Raul Camposano, Jon Fields, Patrick Lin, Steve Lloyd, Joseph Sawicki, Ed Wan
Foundries, EDA vendors, and designers: who shoulders the blame when a design doesn't work in the nano-scale and wireless era? CICC (2005)
Hiroshi Iwai
CMOS Scaling for sub-90 nm to sub-10 nm. VLSI Design (2004)
Hiroshi Iwai, S. Ohmi
Trend of CMOS downsizing and its reliability. Microelectron. Reliab. 42 (9-11) (2002)
Hiroshi Iwai, Shun'ichiro Ohmi
Silicon integrated circuit technology from past to future. Microelectron. Reliab. 42 (4-5) (2002)
Hiroshi Iwai
CMOS technology-year 2010 and beyond. IEEE J. Solid State Circuits 34 (3) (1999)
Hiroshi Iwai
CMOS-year 2010 and beyond; from technological side. CICC (1998)
John S. Wenstrand, Hiroshi Iwai, Robert W. Dutton
A manufacturing-oriented environment for synthesis of fabrication processes. ICCAD (1989)
Hiroshi Iwai, Mark R. Pinto, Conor S. Rafferty, J. E. Oristian, Robert W. Dutton
Analysis of Velocity Saturation and Other Effects on Short-Channel MOS Transistor Capacitances. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 6 (2) (1987)