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3D scaling for insulated gate bipolar transistors (IGBTs) with low Vce(sat).

Kazuo TsutsuiKuniyuki KakushimaTakuya HoshiiA. NakajimaShinichi NishizawaHitoshi WakabayashiIriya MunetaK. SatoTomoko MatsudaiWataru SaitoTakuya SarayaK. ItouM. FukuiS. SuzukiM. KobayashiT. TakakuraToshiro HiramotoAtsushi OguraY. NumasawaIchiro OmuraH. OhashiHiroshi Iwai
Published in: ASICON (2017)
Keyphrases
  • field effect transistors
  • high density
  • steady state
  • mathematical analysis
  • sat solvers
  • markov chain
  • real time
  • neural network
  • positive and negative
  • data center
  • search strategies
  • satisfiability problem
  • high levels