Wataru Saito

Publication Activity (10 Years)

Years Active: 2015-2024
Publications (10 Years): 14

Top Topics

Wide Dynamic Range

Cmos Image Sensor

Fluorescence Microscopy

Top Venues

Microelectron. Reliab.

Publications

Thatree Mamee, Zaiqi Lou, Katsuhiro Hata, Makoto Takamiya, Takayasu Sakurai, Shinichi Nishizawa, Wataru Saito
Estimating of IGBT Bond Wire Lift-Off Trend Using Convolutional Neural Network (CNN). IEEE Access 12 (2024)
Zaiqi Lou, Thatree Mamee, Katsuhiro Hata, Makoto Takamiya, Shinichi Nishizawa, Wataru Saito
IGBT Power Module Design for Suppressing Gate Voltage Spike at Digital Gate Control. IEEE Access 11 (2023)
Yoichi Iizuka, Akihide Maezono, Wataru Saito, Atsushi Yamane, Kazuhiko Takami, Fukashi Morishita
A Low Noise 8Mpixel CMOS Image Sensor with 5.36GHz Global Counter and Dual Latch Skew Canceler for Surveillance AI Camera System. A-SSCC (2023)
Fukashi Morishita, Wataru Saito, Norihito Kato, Yoichi Iizuka, Masao Ito
High Accuracy Test Techniques with Fine Pattern Generator and Ramp Test Circuit for CMOS Image Sensor. IEICE Trans. Electron. (7) (2022)
Qihao Song, Joseph P. Kozak, Yunwei Ma, Jingcun Liu, Ruizhe Zhang, Roman Volkov, Daniel Sherman, Kurt V. Smith, Wataru Saito, Yuhao Zhang
GaN MIS-HEMTs in Repetitive Overvoltage Switching: Parametric Shift and Recovery. IRPS (2022)
Fukashi Morishita, Wataru Saito, Yoichi Iizuka, Norihito Kato, Ryota Otake, Masao Ito
A 30.2-µ Vrms Horizontal Streak Noise 8.3-Mpixel 60-Frames/s CMOS Image Sensor With Skew-Relaxation ADC and On-Chip Testable Ramp Generator for Surveillance Camera. IEEE J. Solid State Circuits 57 (10) (2022)
Joseph P. Kozak, Qihao Song, Jingcun Liu, Ruizhe Zhang, Qiang Li, Wataru Saito, Yuhao Zhang
Accelerating the Recovery of p-Gate GaN HEMTs after Overvoltage Stresses. IRPS (2022)
Wataru Saito, Yoichi Iizuka, Norihito Kato, Ryota Otake, Fukashi Morishita
A Low Noise and Linearity Improvement CMOS Image Sensor for Surveillance Camera with Skew-Relaxation Local Multiply Circuit and On-Chip Testable Ramp Generator. A-SSCC (2021)
Fukashi Morishita, Masanori Otsuka, Wataru Saito
An ADC Test Technique With Dual-Path/Multi-Functional Fine Pattern Generator Realizing High Accuracy Measurement for CMOS Image Sensor. ATS (2020)
Toshiro Hiramoto, K. Satoh, Tomoko Matsudai, Wataru Saito, Kuniyuki Kakushima, Takuya Hoshii, K. Furukawa, M. Watanabe, N. Shigyo, Hitoshi Wakabayashi, Kazuo Tsutsui, T. Sarava, Hiroshi Iwai, Atsushi Ogura, Shinichi Nishizawa, Ichiro Omura, H. Ohashi, K. Itou, T. Takakura, M. Fukui, S. Suzuki, Ken Takeuchi, Masanori Tsukuda, Y. Numasawa
Switching of 3300V Scaled IGBT by 5V Gate Drive. ASICON (2019)
Wataru Saito, Toshiyuki Naka
Relation between UIS withstanding capability and I-V characteristics in high-voltage GaN-HEMTs. Microelectron. Reliab. (2017)
Takeshi Mizoguchi, Toshiyuki Naka, Yuta Tanimoto, Yasuhiro Okada, Wataru Saito, Mitiko Miura-Mattausch, Hans Jürgen Mattausch
Modeling of Field-Plate Effect on Gallium-Nitride-Based High Electron Mobility Transistors for High-Power Applications. IEICE Trans. Electron. (3) (2017)
Kazuo Tsutsui, Kuniyuki Kakushima, Takuya Hoshii, A. Nakajima, Shinichi Nishizawa, Hitoshi Wakabayashi, Iriya Muneta, K. Sato, Tomoko Matsudai, Wataru Saito, Takuya Saraya, K. Itou, M. Fukui, S. Suzuki, M. Kobayashi, T. Takakura, Toshiro Hiramoto, Atsushi Ogura, Y. Numasawa, Ichiro Omura, H. Ohashi, Hiroshi Iwai
3D scaling for insulated gate bipolar transistors (IGBTs) with low Vce(sat). ASICON (2017)
Wataru Saito, Toshiyuki Naka
UIS test of high-voltage GaN-HEMTs with p-type gate structure. Microelectron. Reliab. 64 (2016)
Wataru Saito, Takeshi Suwa, Takeshi Uchihara, Toshiyuki Naka, Taichi Kobayashi
Breakdown behaviour of high-voltage GaN-HEMTs. Microelectron. Reliab. 55 (9-10) (2015)
Takashi Setoya, Tsuneo Ogura, Wataru Saito, Tomoko Matsudai, Koichi Endo
Destruction failure analysis and international reliability test standard for power devices. Microelectron. Reliab. 55 (9-10) (2015)
Li Zhang, Mitsuo Koike, Mizuki Ono, Shogo Itai, Kazuya Matsuzawa, Syotaro Ono, Wataru Saito, Masakazu Yamaguchi, Yohei Hayase, Keiryo Hara
Comprehensive 2D-carrier profiling of low-doping region by high-sensitivity scanning spreading resistance microscopy (SSRM) for power device applications. Microelectron. Reliab. 55 (9-10) (2015)