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Modeling of Field-Plate Effect on Gallium-Nitride-Based High Electron Mobility Transistors for High-Power Applications.

Takeshi MizoguchiToshiyuki NakaYuta TanimotoYasuhiro OkadaWataru SaitoMitiko Miura-MattauschHans Jürgen Mattausch
Published in: IEICE Trans. Electron. (2017)
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