Modeling of Field-Plate Effect on Gallium-Nitride-Based High Electron Mobility Transistors for High-Power Applications.
Takeshi MizoguchiToshiyuki NakaYuta TanimotoYasuhiro OkadaWataru SaitoMitiko Miura-MattauschHans Jürgen MattauschPublished in: IEICE Trans. Electron. (2017)