Takuya Hoshii

Publication Activity (10 Years)

Years Active: 2017-2019
Publications (10 Years): 4

Top Topics

Field Effect Transistors

Negative Impact

Top Venues

Publications

Toshiro Hiramoto, K. Satoh, Tomoko Matsudai, Wataru Saito, Kuniyuki Kakushima, Takuya Hoshii, K. Furukawa, M. Watanabe, N. Shigyo, Hitoshi Wakabayashi, Kazuo Tsutsui, T. Sarava, Hiroshi Iwai, Atsushi Ogura, Shinichi Nishizawa, Ichiro Omura, H. Ohashi, K. Itou, T. Takakura, M. Fukui, S. Suzuki, Ken Takeuchi, Masanori Tsukuda, Y. Numasawa
Switching of 3300V Scaled IGBT by 5V Gate Drive. ASICON (2019)
Kuniyuki Kakushima, Takuya Hoshii, M. Watanabe, N. Shizyo, K. Furukawa, Takuya Saraya, T. Takakura, K. Itou, M. Fukui, S. Suzuki, Ken Takeuchi, Iriya Muneta, Hitoshi Wakabayashi, Y. Numasawa, Atsushi Ogura, Shinichi Nishizawa, Kazuo Tsutsui, Toshiro Hiramoto, H. Ohashi, Hiroshi Iwai
New Methodology for Evaluating Minority Carrier Lifetime for Process Assessment. VLSI Circuits (2018)
Takuya Hoshii, Kazuyoshi Furukawa, Kuniyuki Kakushima, Masahiro Watanabe, Naoyuki Shigvo, Takuya Saraya, Toshihiko Takakura, Kazuo Itou, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi, Iriya Muneta, Hitoshi Wakabayashi, Shinichi Nishizawa, Kazuo Tsutsui, Toshiro Hiramoto, Hiromichi Ohashi, Hiroshi Lwai
Verification of the Injection Enhancement Effect in IGBTs by Measuring the Electron and Hole Currents Separately. ESSDERC (2018)
Kazuo Tsutsui, Kuniyuki Kakushima, Takuya Hoshii, A. Nakajima, Shinichi Nishizawa, Hitoshi Wakabayashi, Iriya Muneta, K. Sato, Tomoko Matsudai, Wataru Saito, Takuya Saraya, K. Itou, M. Fukui, S. Suzuki, M. Kobayashi, T. Takakura, Toshiro Hiramoto, Atsushi Ogura, Y. Numasawa, Ichiro Omura, H. Ohashi, Hiroshi Iwai
3D scaling for insulated gate bipolar transistors (IGBTs) with low Vce(sat). ASICON (2017)