Comprehensive 2D-carrier profiling of low-doping region by high-sensitivity scanning spreading resistance microscopy (SSRM) for power device applications.
Li ZhangMitsuo KoikeMizuki OnoShogo ItaiKazuya MatsuzawaSyotaro OnoWataru SaitoMasakazu YamaguchiYohei HayaseKeiryo HaraPublished in: Microelectron. Reliab. (2015)