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/Ce-silicate gate dielectrics.
Kuniyuki Kakushima
K. Okamoto
T. Koyanagi
M. Kouda
Kiichi Tachi
Takamasa Kawanago
J. Song
Parhat Ahmet
Hiroshi Nohira
Kazuo Tsutsui
Nobuyuki Sugii
Takeo Hattori
Hiroshi Iwai
Published in:
Microelectron. Reliab. (2010)
Keyphrases
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gate dielectrics
electrical properties
leakage current
si sio
silicon dioxide
transmission electron microscopy
three dimensional