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/Ce-silicate gate dielectrics.

Kuniyuki KakushimaK. OkamotoT. KoyanagiM. KoudaKiichi TachiTakamasa KawanagoJ. SongParhat AhmetHiroshi NohiraKazuo TsutsuiNobuyuki SugiiTakeo HattoriHiroshi Iwai
Published in: Microelectron. Reliab. (2010)
Keyphrases
  • gate dielectrics
  • electrical properties
  • leakage current
  • si sio
  • silicon dioxide
  • transmission electron microscopy
  • three dimensional