Nobuyuki Sugii

Publication Activity (10 Years)

Years Active: 2006-2017
Publications (10 Years): 2

Top Topics

Cmos Technology

Digital Signal Processor

Top Venues

Microelectron. Reliab.

Publications

Koichiro Ishibashi, Junya Kikuchi, Nobuyuki Sugii
A 910nW delta sigma modulator using 65nm SOTB technology for mixed signal IC of IoT applications. ICICDT (2017)
M. S. Hadi, Nobuyuki Sugii, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Kuniyuki Kakushima
Si bottom electrodes. Microelectron. Reliab. 63 (2016)
Minh-Thien Hoang, Nobuyuki Sugii, Koichiro Ishibashi
A 27.6 µW 315 MHz low-complexity OOK receiver with on-off RF front-end. IEICE Electron. Express 12 (7) (2015)
Toshitsugu Sakamoto, Yukihide Tsuji, Munehiro Tada, Hideki Makiyama, Takumi Hasegawa, Yoshiki Yamamoto, Shinobu Okanishi, Keiichi Maekawa, Naoki Banno, Makoto Miyamura, Koichiro Okamoto, Noriyuki Iguchi, Yasuhiro Ogasahara, Hidekazu Oda, Shiro Kamohara, Yasushi Yamagata, Nobuyuki Sugii, Hiromitsu Hada
0.39-V, 18.26-µW/MHz SOTB CMOS Microcontroller with embedded atom switch ROM. COOL Chips (2015)
Koichiro Ishibashi, Nobuyuki Sugii, Shiro Kamohara, Kimiyoshi Usami, Hideharu Amano, Kazutoshi Kobayashi, Cong-Kha Pham
A Perpetuum Mobile 32bit CPU on 65nm SOTB CMOS Technology with Reverse-Body-Bias Assisted Sleep Mode. IEICE Trans. Electron. (7) (2015)
Wei Li, Akito Sasaki, Hideyuki Oozu, Katsuaki Aoki, Kuniyuki Kakushima, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kenji Natori, Hiroshi Iwai
Electron transport mechanism of tungsten trioxide powder thin film studied by investigating effect of annealing on resistivity. Microelectron. Reliab. 55 (2) (2015)
Wei Li, Akito Sasaki, Hideyuki Oozu, Katsuaki Aoki, Kuniyuki Kakushima, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kenji Natori, Hiroshi Iwai
Improvement of charge/discharge performance for lithium ion batteries with tungsten trioxide electrodes. Microelectron. Reliab. 55 (2) (2015)
Duc-Hung Le, Nobuyuki Sugii, Shiro Kamohara, Xuan-Thuan Nguyen, Koichiro Ishibashi, Cong-Kha Pham
Design of a low-power fixed-point 16-bit digital signal processor using 65nm SOTB process. ICICDT (2015)
Yukihide Tsuji, Xu Bai, Makoto Miyamura, Toshitsugu Sakamoto, Munehiro Tada, Naoki Banno, Koichiro Okamoto, Noriyuki Iguchi, Nobuyuki Sugii, Hiromitsu Hada
Sub-μW standby power, <18 μW/DMIPS@25MHz MCU with embedded atom-switch programmable logic and ROM. VLSIC (2015)
Toshitsugu Sakamoto, Yukihide Tsuji, Munehiro Tada, Hideki Makiyama, Takumi Hasegawa, Yoshiki Yamamoto, Shinobu Okanishi, Keiichi Maekawa, Naoki Banno, Makoto Miyamura, Koichiro Okamoto, Noriyuki Iguchi, Hidekazu Oda, Shiro Kamohara, Yasushi Yamagata, Nobuyuki Sugii, Hiromitsu Hada, Yasuhiro Ogasahara
A Silicon-on-Thin-Buried-Oxide CMOS Microcontroller with Embedded Atom-Switch ROM. IEEE Micro 35 (6) (2015)
Shiro Kamohara, Nobuyuki Sugii, Koichiro Ishibashi, Kimiyoshi Usami, Hideharu Amano, Kazutoshi Kobayashi, Cong-Kha Pham
A perpetuum mobile 32bit CPU on 65nm SOTB CMOS technology with reverse-body-bias assisted sleep mode. Hot Chips Symposium (2014)
Koichiro Ishibashi, Nobuyuki Sugii, Kimiyoshi Usami, Hideharu Amano, Kazutoshi Kobayashi, Cong-Kha Pham, Hideki Makiyama, Yoshiki Yamamoto, Hirofumi Shinohara, Toshiaki Iwamatsu, Yasuo Yamaguchi, Hidekazu Oda, Takumi Hasegawa, Shinobu Okanishi, Hiroshi Yanagita, Shiro Kamohara, Masaru Kadoshima, Keiichi Maekawa, Tomohiro Yamashita, Duc-Hung Le, Takumu Yomogita, Masaru Kudo, Kuniaki Kitamori, Shuya Kondo, Yuuki Manzawa
A Perpetuum Mobile 32bit CPU with 13.4pJ/cycle, 0.14µA sleep current using Reverse Body Bias Assisted 65nm SOTB CMOS technology. COOL Chips (2014)
Chunmeng Dou, Tomoya Shoji, Kazuhiro Nakajima, Kuniyuki Kakushima, Parhat Ahmet, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kenji Natori, Hiroshi Iwai
Characterization of interface state density of three-dimensional Si nanostructure by charge pumping measurement. Microelectron. Reliab. 54 (4) (2014)
Yan Wu, Hiroyuki Hasegawa, Kuniyuki Kakushima, Kenji Ohmori, Takanobu Watanabe, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, Kazuo Tsutsui, Yoshinori Kataoka, Kenji Natori, Keisaku Yamada, Hiroshi Iwai
A novel hetero-junction Tunnel-FET using Semiconducting silicide-Silicon contact and its scalability. Microelectron. Reliab. 54 (5) (2014)
Takamasa Kawanago, Kuniyuki Kakushima, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kenji Natori, Hiroshi Iwai
Advantage of TiN Schottky gate over conventional Ni for improved electrical characteristics in AlGaN/GaN HEMT. ESSDERC (2013)
M. Mamatrishat, T. Kubota, T. Seki, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Hiroshi Iwai
/Si MOS capacitors. Microelectron. Reliab. 52 (6) (2012)
Takamasa Kawanago, Kuniyuki Kakushima, Parhat Ahmet, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Kazuo Tsutsui, Kenji Natori, Takeo Hattori, Hiroshi Iwai
(100)- and (110)-oriented nMOSFETs with highly scaled EOT in La-silicate/Si interface for multi-gate architecture. ESSDERC (2012)
Chunmeng Dou, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Hiroshi Iwai
based ReRAM cell incorporated with Si buffer layer. Microelectron. Reliab. 52 (4) (2012)
D. Zade, Soshi Sato, Kuniyuki Kakushima, A. Srivastava, Parhat Ahmet, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Chandan Kumar Sarkar, Hiroshi Iwai
gated nMOSFETs on low-frequency noise. Microelectron. Reliab. 51 (4) (2011)
Kuniyuki Kakushima, K. Okamoto, T. Koyanagi, M. Kouda, Kiichi Tachi, Takamasa Kawanago, J. Song, Parhat Ahmet, Hiroshi Nohira, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai
/Ce-silicate gate dielectrics. Microelectron. Reliab. 50 (3) (2010)
Kuniyuki Kakushima, Kiichi Tachi, Parhat Ahmet, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai
gate dielectrics. Microelectron. Reliab. 50 (6) (2010)
Parhat Ahmet, Kentaro Nakagawa, Kuniyuki Kakushima, Hiroshi Nohira, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai
gate stack. Microelectron. Reliab. 48 (11-12) (2008)
Joel Molina Reyes, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai
gated MOSFET structures after electrical stress. IEICE Electron. Express 4 (6) (2007)
Jin-Aun Ng, Nobuyuki Sugii, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Takeo Hattori, Hiroshi Iwai
nMISFETs after post deposition annealing. IEICE Electron. Express 3 (13) (2006)