Advantage of TiN Schottky gate over conventional Ni for improved electrical characteristics in AlGaN/GaN HEMT.
Takamasa KawanagoKuniyuki KakushimaYoshinori KataokaAkira NishiyamaNobuyuki SugiiHitoshi WakabayashiKazuo TsutsuiKenji NatoriHiroshi IwaiPublished in: ESSDERC (2013)