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(100)- and (110)-oriented nMOSFETs with highly scaled EOT in La-silicate/Si interface for multi-gate architecture.

Takamasa KawanagoKuniyuki KakushimaParhat AhmetYoshinori KataokaAkira NishiyamaNobuyuki SugiiKazuo TsutsuiKenji NatoriTakeo HattoriHiroshi Iwai
Published in: ESSDERC (2012)
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