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Poly-Si gate electrodes for AlGaN/GaN HEMT with high reliability and low gate leakage current.
J. Chen
Hitoshi Wakabayashi
Kazuo Tsutsui
Hiroshi Iwai
Kuniyuki Kakushima
Published in:
Microelectron. Reliab. (2016)
Keyphrases
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leakage current
high reliability
low voltage
electrical properties
power line
silicon dioxide
high precision
low cost
low overhead
real time
design considerations
power management