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Poly-Si gate electrodes for AlGaN/GaN HEMT with high reliability and low gate leakage current.

J. ChenHitoshi WakabayashiKazuo TsutsuiHiroshi IwaiKuniyuki Kakushima
Published in: Microelectron. Reliab. (2016)
Keyphrases
  • leakage current
  • high reliability
  • low voltage
  • electrical properties
  • power line
  • silicon dioxide
  • high precision
  • low cost
  • low overhead
  • real time
  • design considerations
  • power management