Shun'ichiro Ohmi

Publication Activity (10 Years)

Years Active: 2002-2023
Publications (10 Years): 28

Top Topics

Leakage Current

Top Venues

IEICE Trans. Electron.

IEICE Electron. Express

Publications

Joong-Won Shin, Masakazu Tanuma, Shun'ichiro Ohmi
Gate Insulator for Analog Memory Application. IEICE Trans. Electron. 106 (10) (2023)
Shun'ichiro Ohmi, Masakazu Tanuma, Joong-Won Shin
Precise VTH Control of MFSFET with 5 nm-thick FeND-HfO2 Realized by Kr-Plasma Sputtering for Pt Gate Electrode Deposition. DRC (2023)
Shun'ichiro Ohmi
Foreword. IEICE Trans. Electron. 106 (10) (2023)
Joong-Won Shin, Masakazu Tanuma, Shun'ichiro Ohmi
Gate Insulator Utilizing Low Power Sputtering for Pt Gate Electrode Deposition. IEICE Trans. Electron. (10) (2022)
Masakazu Tanuma, Joong-Won Shin, Shun'ichiro Ohmi
Formation. IEICE Trans. Electron. (10) (2022)
Eun-Ki Hong, Kyung Eun Park, Shun'ichiro Ohmi
Insulator Formation for Pentacene-Based Back-Gate Type Floating-Gate Memory with an Amorphous Rubrene Passivation Layer. IEICE Trans. Electron. (10) (2022)
Kyung Eun Park, Shun'ichiro Ohmi
High-k LaBxNy gate insulator formed by the Ar/N2 plasma sputtering of N-doped LaB6 metal thin films and its application to floating-gate memory. DRC (2020)
Kyung Eun Park, Shun'ichiro Ohmi
Thin Film Formation Utilizing RF Sputtering. IEICE Trans. Electron. (6) (2020)
Min Gee Kim, Masakazu Kataoka, Rengie Mark D. Mailig, Shun'ichiro Ohmi
Utilizing Pt Gate Electrodes. IEICE Trans. Electron. (6) (2020)
Rengie Mark D. Mailig, Min Gee Kim, Shun'ichiro Ohmi
The Evaluation of the Interface Properties of PdEr-Silicide on Si(100) Formed with TiN Encapsulating Layer and Dopant Segregation Process. IEICE Trans. Electron. (6) (2020)
Shun'ichiro Ohmi, Shin Ishimatsu, Yuske Horiuchi, Sohya Kudoh
-Plasma Nitridation for High-k HfN Gate Insulator Formed by Electron Cyclotron Resonance Plasma Sputtering. IEICE Trans. Electron. (6) (2020)
Shun'ichiro Ohmi, Min Gee Kim, Masakazu Kataoka, Masaki Hayashi, Rengie Mark D. Mailig
Low-Voltage Operation of MFSFET with Ferroelectric Nondoped HfO2 Formed by Kr/O2-Plasma Sputtering. DRC (2020)
Shun'ichiro Ohmi, Mizuha Hiroki, Yasutaka Maeda
AuGe-Alloy Source and Drain Formation by the Lift-Off Process for the Scaling of Bottom-Contact Type Pentacene-Based OFETs. IEICE Trans. Electron. (2) (2019)
Shun'ichiro Ohmi, Yuya Tsukamoto, Rengie Mark D. Mailig
Etching Control of HfN Encapsulating Layer for PtHf-Silicide Formation with Dopant Segregation Process. IEICE Trans. Electron. (6) (2019)
Min Gee Kim, Shun'ichiro Ohmi
Directly Deposited on Si(100). IEICE Trans. Electron. (6) (2019)
Shun'ichiro Ohmi, Yizhe Ding, Sohya Kudoh
Ultrathin HfN Multilayer Gate Insulator Formation with High Dielectric Constant Induced by Interface Polarization. DRC (2019)
Rengie Mark D. Mailig, Shun'ichiro Ohmi
Si with TiN Encapsulating Layer and Its Application to Dopant Segregation Process. IEICE Trans. Electron. (6) (2019)
Binjian Zeng, Jiajia Liao, Qiangxiang Peng, Min Liao, Yichun Zhou, Shun'ichiro Ohmi
Thin Film Formation. IEICE Trans. Electron. (6) (2019)
Sohya Kudoh, Shun'ichiro Ohmi
Multi-level 2-bit/cell operation utilizing Hf-based MONOS nonvolatile memory. DRC (2018)
Yasutaka Maeda, Mizuha Hiroki, Shun'ichiro Ohmi
Bottom-Contact Electrodes. IEICE Trans. Electron. (5) (2018)
Shun'ichiro Ohmi, Yuya Tsukamoto, Weiguang Zuo, Yasushi Masahiro
PdEr-Silicide Formation and Contact Resistivity Reduction to n-Si(100) Realized by Dopant Segregation Process. IEICE Trans. Electron. (5) (2018)
Sohya Kudoh, Shun'ichiro Ohmi
Ambient. IEICE Trans. Electron. (5) (2018)
Shun'ichiro Ohmi, Mengyi Chen, Weiguang Zuo, Yasushi Masahiro
PdYb-Silicide with Low Schottky Barrier Height to n-Si Formed from Pd/Yb/Si(100) Stacked Structures. IEICE Trans. Electron. (5) (2017)
Yasutaka Maeda, Shun'ichiro Ohmi, Tetsuya Goto, Tadahiro Ohmi
Interfacial Layer on Device Characteristics of Pentacene-Based OFET. IEICE Trans. Electron. (5) (2017)
Sohya Kudoh, Shun'ichiro Ohmi
A Study on Substrate Orientation Dependence of Si Surface Flattening Process by Sacrificial Oxidation and Its Effect on MIS Diode Characteristics. IEICE Trans. Electron. (5) (2016)
Shun'ichiro Ohmi, Mengyi Chen, Xiaopeng Wu, Yasushi Masahiro
PtHf Silicide Formation Utilizing PtHf-Alloy Target for Low Contact Resistivity. IEICE Trans. Electron. (5) (2016)
Yasutaka Maeda, Shun'ichiro Ohmi, Tetsuya Goto, Tadahiro Ohmi
Donor Layer. IEICE Trans. Electron. (5) (2016)
Nithi Atthi, Shun'ichiro Ohmi
gate insulator utilizing ECR plasma sputtering. IEICE Electron. Express 13 (10) (2016)
Shun'ichiro Ohmi, Yeyuan Liu
In-situ formation of Hf-based MONOS structures for non-volatile memory applications. IEICE Electron. Express 12 (24) (2015)
Sohya Kudoh, Shun'ichiro Ohmi
A Study on Si(100) Surface Flattening Utilizing Sacrificial Oxidation Process and Its Effect on MIS Diode Characteristics. IEICE Trans. Electron. (5) (2015)
Dae-Hee Han, Shun'ichiro Ohmi, Tomoyuki Suwa, Philippe Gaubert, Tadahiro Ohmi
Influence of Si Surface Roughness on Electrical Characteristics of MOSFET with HfON Gate Insulator Formed by ECR Plasma Sputtering. IEICE Trans. Electron. (5) (2014)
Changhwan Shin, Gwang-Geun Lee, Dae-Hee Han, Seung-Pil Han, Eisuke Tokumitsu, Shun'ichiro Ohmi, Dong-Joo Kim, Hiroshi Ishiwara, Minseo Park, Seung-Hyun Kim, Wan-Gyu Lee, Yun Jeong Hwang, Byung-Eun Park
Experimental demonstration of a ferroelectric FET using paper substrate. IEICE Electron. Express 11 (14) (2014)
Shun'ichiro Ohmi
Importance of Si surface flatness to realize high-performance Si devices utilizing ultrathin films with new material system. IEICE Electron. Express 11 (14) (2014)
Dae-Hee Han, Shun'ichiro Ohmi
Annealing and Its Effect on Ultrathin HfON Gate Insulator Formation. IEICE Trans. Electron. (5) (2013)
Shun'ichiro Ohmi, Jun Arima
Contact resistivity reduction for PtSi/Si(100) by dopant segregation process. IEICE Electron. Express 10 (24) (2013)
Dae-Hee Han, Huiseong Han, Shun'ichiro Ohmi
Impact of Si surface roughness on MOSFET characteristics with ultrathin HfON gate insulator formed by ECR plasma sputtering. IEICE Electron. Express 10 (18) (2013)
Min Liao, Hiroshi Ishiwara, Shun'ichiro Ohmi
Growth Mechanism of Pentacene on HfON Gate Insulator and Its Effect on Electrical Properties of Organic Field-Effect Transistors. IEICE Trans. Electron. (5) (2012)
Huiseong Han, Shun'ichiro Ohmi
Hafnium-nitride gate insulator formed by electron-cyclotron-resonance plasma sputtering. IEICE Electron. Express 9 (16) (2012)
Shun'ichiro Ohmi, Jun Gao
Low contact resistivity of barrier height controlled PtHfSi to Si evaluated by cross-bridge Kelvin resistor. IEICE Electron. Express 8 (20) (2011)
Min Liao, Hiroshi Ishiwara, Shun'ichiro Ohmi
Performance improvement of pentacene based organic field-effect transistor with HfON gate insulator. IEICE Electron. Express 8 (18) (2011)
Jumpei Ishikawa, Jun Gao, Shun'ichiro Ohmi
Work function modulation of PtSi by alloying with Yb. IEICE Electron. Express 8 (1) (2011)
Jun Gao, Jumpei Ishikawa, Shun'ichiro Ohmi
A study on precise control of PtSi work function by alloying with Hf. IEICE Electron. Express 8 (1) (2011)
Takahiro Sano, Shun'ichiro Ohmi
Selective etching of HfN gate electrode for HfN/HfSiON gate stack in-situ formations. IEICE Electron. Express 8 (18) (2011)
Young-Uk Song, Hiroshi Ishiwara, Shun'ichiro Ohmi
Investigation of n-Type Pentacene Based MOS Diodes with Ultra-Thin Metal Interface Layer. IEICE Trans. Electron. (5) (2011)
Jun Gao, Jumpei Ishikawa, Shun'ichiro Ohmi
Modulation of PtSi Work Function by Alloying with Low Work Function Metal. IEICE Trans. Electron. (5) (2011)
Shun'ichiro Ohmi, Tetsushi Sakai
A Proposal of TC-MOSFET and Fabrication Process of Twin Si Channels. IEICE Trans. Electron. (5) (2007)
Shun'ichiro Ohmi, Tomoki Kurose, Masaki Satoh
Thin Films. IEICE Trans. Electron. (5) (2006)
Takashi Yamazaki, Shun'ichiro Ohmi, Shinya Morita, Hiroyuki Ohri, Junichi Murota, Masao Sakuraba, Hiroo Omi, Tetsushi Sakai
Separation by Bonding Si Islands (SBSI) for Advanced CMOS LSI Applications. IEICE Trans. Electron. (4) (2005)
Yongshik Kim, Kunihiro Miyauchi, Shun'ichiro Ohmi, Kazuo Tsutsui, Hiroshi Iwai
thin films grown by E-beam evaporation. Microelectron. J. 36 (1) (2005)
Hiroshi Iwai, Shun'ichiro Ohmi
Silicon integrated circuit technology from past to future. Microelectron. Reliab. 42 (4-5) (2002)