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Influence of Si Surface Roughness on Electrical Characteristics of MOSFET with HfON Gate Insulator Formed by ECR Plasma Sputtering.

Dae-Hee HanShun'ichiro OhmiTomoyuki SuwaPhilippe GaubertTadahiro Ohmi
Published in: IEICE Trans. Electron. (2014)
Keyphrases
  • surface roughness
  • leakage current
  • low voltage
  • specular reflection
  • signal processing
  • chemical vapor deposition