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Influence of Si Surface Roughness on Electrical Characteristics of MOSFET with HfON Gate Insulator Formed by ECR Plasma Sputtering.
Dae-Hee Han
Shun'ichiro Ohmi
Tomoyuki Suwa
Philippe Gaubert
Tadahiro Ohmi
Published in:
IEICE Trans. Electron. (2014)
Keyphrases
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surface roughness
leakage current
low voltage
specular reflection
signal processing
chemical vapor deposition