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High-k LaBxNy gate insulator formed by the Ar/N2 plasma sputtering of N-doped LaB6 metal thin films and its application to floating-gate memory.
Kyung Eun Park
Shun'ichiro Ohmi
Published in:
DRC (2020)
Keyphrases
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thin film
chemical vapor deposition
grain size
room temperature
film thickness
high density
gate insulator
plasma etching
multi layer
short circuit
silicon nitride
neural network