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Low-Voltage Operation of MFSFET with Ferroelectric Nondoped HfO2 Formed by Kr/O2-Plasma Sputtering.

Shun'ichiro OhmiMin Gee KimMasakazu KataokaMasaki HayashiRengie Mark D. Mailig
Published in: DRC (2020)
Keyphrases
  • low voltage
  • leakage current
  • power line
  • design considerations
  • magnetic field
  • cmos technology
  • pattern recognition
  • real time
  • high density
  • thin film
  • electrical properties
  • chemical vapor deposition