Changhwan Shin

Publication Activity (10 Years)

Years Active: 2010-2024
Publications (10 Years): 13

Top Topics

Field Effect Transistors

Automatic Model Selection

Quantitative Evaluation

Top Venues

IEICE Electron. Express

IEICE Trans. Electron.

Publications

Seong-il Im, Jae-Seung Jeong, Junseo Lee, Changhwan Shin, Jeong Ho Cho, Hyunsu Ju
Column Row Convolutional Neural Network: Reducing Parameters for Efficient Image Processing. Neural Comput. 36 (4) (2024)
Myoungsu Son, Juho Sung, Hyoung Won Baac, Changhwan Shin
Comparative Study of Novel u-Shaped SOI FinFET Against Multiple-Fin Bulk/SOI FinFET. IEEE Access 11 (2023)
Taeeon Park, Jihwan Kwak, Hongjoon Ahn, Jinwoong Lee, Jaehyuk Lim, Sangho Yu, Changhwan Shin, Taesup Moon
GAN-Based Framework for Unified Estimation of Process-Induced Random Variation in FinFET. IEEE Access 10 (2022)
Sangho Yu, Sang Min Won, Hyoung Won Baac, Donghee Son, Changhwan Shin
Quantitative Evaluation of Line-Edge Roughness in Various FinFET Structures: Bayesian Neural Network With Automatic Model Selection. IEEE Access 10 (2022)
Muhammad Faraz, Muhammad Awais Abbasi, Donghee Son, Changhwan Shin, Kyu-Tae Lee, Sang Min Won, Hyoung Won Baac
Strain-Dependent Photoacoustic Characteristics of Free-Standing Carbon-Nanocomposite Transmitters. Sensors 22 (9) (2022)
Yejoo Choi, Changwoo Han, Jaemin Shin, Seungjun Moon, Jinhong Min, Hyeonjung Park, Deokjoon Eom, Jehoon Lee, Changhwan Shin
Impact of Chamber/Annealing Temperature on the Endurance Characteristic of Zr: HfO2 Ferroelectric Capacitor. Sensors 22 (11) (2022)
Sojin Jeong, Sangwoo Han, Ho-Jun Lee, Deokjoon Eom, Gisu Youm, Yejoo Choi, Seungjun Moon, Kyungjin Ahn, Jinju Oh, Changhwan Shin
Abruptly-Switching MoS₂-Channel Atomic-Threshold-Switching Field-Effect Transistor With AgTi/HfO₂-Based Threshold Switching Device. IEEE Access 9 (2021)
Jaehyuk Lim, Jinwoong Lee, Changhwan Shin
Probabilistic Artificial Neural Network for Line-Edge-Roughness-Induced Random Variation in FinFET. IEEE Access 9 (2021)
Jaehyuk Lim, Changhwan Shin
Machine Learning (ML)-Based Model to Characterize the Line Edge Roughness (LER)-Induced Random Variation in FinFET. IEEE Access 8 (2020)
Eunah Ko, Jaesung Jo, Changhwan Shin, Bich-Yen Nguyen
Layout engineering to suppress hysteresis of negative capacitance FinFET. ICICDT (2017)
Sangheon Oh, Changhwan Shin
Design Optimization for Process-Variation-Tolerant 22-nm FinFET-Based 6-T SRAM Cell with Worst-Case Sampling Method. IEICE Trans. Electron. (5) (2016)
Karam Cho, Jaesung Jo, Changhwan Shin
Amorphous Indium Zinc Oxide Thin-Film Transistor with Steep Subthreshold Slope by Negative Capacitance. IEICE Trans. Electron. (5) (2016)
Seulki Park, Ju Han Lee, Changhwan Shin
Impact of the double-patterning technique on the LER-induced threshold voltage variation in symmetric tunnel field-effect transistor. IEICE Electron. Express 12 (12) (2015)
Changhwan Shin, Gwang-Geun Lee, Dae-Hee Han, Seung-Pil Han, Eisuke Tokumitsu, Shun'ichiro Ohmi, Dong-Joo Kim, Hiroshi Ishiwara, Minseo Park, Seung-Hyun Kim, Wan-Gyu Lee, Yun Jeong Hwang, Byung-Eun Park
Experimental demonstration of a ferroelectric FET using paper substrate. IEICE Electron. Express 11 (14) (2014)
Changhwan Shin
State-of-the-art silicon device miniaturization technology and its challenges. IEICE Electron. Express 11 (10) (2014)
Dyukyoung Moon, Hyunseul Lee, Changhwan Shin, Hyungcheol Shin
Analysis and modeling for random telegraph noise of GIDL current in saddle MOSFET for DRAM application. IEICE Electron. Express 11 (13) (2014)
Hyohyun Nam, Changhwan Shin
Comparative study in work-function variation: Gaussian vs. Rayleigh distribution for grain size. IEICE Electron. Express 10 (9) (2013)
In Jun Park, Changhwan Shin
Effect of double-patterning and double-etching on the line-edge-roughness of multi-gate bulk MOSFETs. IEICE Electron. Express 10 (5) (2013)
Yasumasa Tsukamoto, Makoto Yabuuchi, Hidehiro Fujiwara, Koji Nii, Changhwan Shin, Tsu-Jae King Liu
Quasi-Planar Tri-gate (QPT) bulk CMOS technology for single-port SRAM application. ISQED (2012)
Borivoje Nikolic, Changhwan Shin, Min Hee Cho, Xin Sun, Tsu-Jae King Liu, Bich-Yen Nguyen
SRAM design in fully-depleted SOI technology. ISCAS (2010)