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-Plasma Nitridation for High-k HfN Gate Insulator Formed by Electron Cyclotron Resonance Plasma Sputtering.

Shun'ichiro OhmiShin IshimatsuYuske HoriuchiSohya Kudoh
Published in: IEICE Trans. Electron. (2020)
Keyphrases
  • high energy
  • electric field
  • magnetic field
  • thin film
  • plasma etching
  • scanning electron microscope
  • high density
  • gate insulator
  • image processing