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Ultrathin HfN Multilayer Gate Insulator Formation with High Dielectric Constant Induced by Interface Polarization.

Shun'ichiro OhmiYizhe DingSohya Kudoh
Published in: DRC (2019)
Keyphrases
  • gate insulator
  • dielectric constant
  • metal oxide semiconductor
  • computer vision
  • signal processing
  • differential equations