Importance of Si surface flatness to realize high-performance Si devices utilizing ultrathin films with new material system.
Shun'ichiro OhmiPublished in: IEICE Electron. Express (2014)
Keyphrases
- si sio
- gate dielectrics
- leakage current
- metal oxide
- electrical properties
- low voltage
- chemical vapor deposition
- low energy electron
- x ray
- solid state
- film thickness
- silicon dioxide
- high speed
- three dimensional
- reconstruction method
- mechanical properties
- embedded systems
- field effect transistors
- surface reconstruction
- database replication
- medical images
- low cost
- mobile devices