Influence of device scaling on low-frequency noise in SOI tri-gate N- and p-type Si nanowire MOSFETs.
Masahiro KoyamaMikaël CasséRemi CoquandSylvain BarraudGérard GhibaudoHiroshi IwaiGilles ReimboldPublished in: ESSDERC (2013)
Keyphrases
- low frequency
- high frequency
- frequency domain
- wavelet transform
- discrete wavelet transform
- wavelet analysis
- subband
- wavelet coefficients
- low pass
- frequency band
- high resolution
- low and high frequency
- high frequency components
- original images
- spatial domain
- feature selection
- low voltage
- fusion rules
- leakage current
- computer vision
- wavelet domain
- multiresolution
- electromagnetic fields
- metal oxide semiconductor