Jordi Suñé

Publication Activity (10 Years)

Years Active: 2001-2021
Publications (10 Years): 10

Top Topics

Equivalent Circuit

Electrical Properties

Threshold Functions

Silicon Nitride

Top Venues

Microelectron. Reliab.

Int. J. Circuit Theory Appl.

Publications

Fernando L. Aguirre, Sebastián Matías Pazos, Felix Palumbo, N. Gomez, Enrique Miranda, Jordi Suñé
Line Resistance Impact in Memristor-based Multi Layer Perceptron for Pattern Recognition. LASCAS (2021)
Fernando Leonel Aguirre, Sebastián Matías Pazos, Felix Palumbo, Jordi Suñé, Enrique Miranda
Application of the Quasi-Static Memdiode Model in Cross-Point Arrays for Large Dataset Pattern Recognition. IEEE Access 8 (2020)
Alberto Rodriguez-Fernandez, J. Muñoz-Gorriz, Jordi Suñé, Enrique Miranda
A new method for estimating the conductive filament temperature in OxRAM devices based on escape rate theory. Microelectron. Reliab. (2018)
German Agustin Patterson, Jordi Suñé, Enrique Miranda
SPICE simulation of memristive circuits based on memdiodes with sigmoidal threshold functions. Int. J. Circuit Theory Appl. 46 (1) (2018)
Alberto Rodriguez-Fernandez, Carlo Cagli, Luca Perniola, Jordi Suñé, Enrique Miranda
Identification of the generation/rupture mechanism of filamentary conductive paths in ReRAM devices using oxide failure analysis. Microelectron. Reliab. (2017)
Enrique Miranda, Jordi Suñé, Chengbin Pan, Marco A. Villena, Na Xiao, Mario Lanza
Equivalent circuit model for the electron transport in 2D resistive switching material systems. ESSDERC (2017)
German Agustin Patterson, Jordi Suñé, Enrique Miranda
Voltage-Driven Hysteresis Model for Resistive Switching: SPICE Modeling and Circuit Applications. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 36 (12) (2017)
Alberto Rodriguez-Fernandez, M. B. González, Francesca Campabadal, Jordi Suñé, Enrique Miranda
-based nanolaminates. Microelectron. Reliab. 55 (9-10) (2015)
Juli Blasco, Nestor Fabian Ghenzi, Jordi Suñé, Pablo Levy, Enrique Miranda
Equivalent circuit modeling of the bistable conduction characteristics in electroformed thin dielectric films. Microelectron. Reliab. 55 (1) (2015)
Juli Blasco, Jordi Suñé, Enrique Miranda
Modeling of the conduction characteristics of voltage-driven bipolar RRAMs including turning point effects. ESSDERC (2015)
Juli Blasco, Helena Castán, Héctor García, Salvador Dueñas, Jordi Suñé, Marianna Kemell, Kaupo Kukli, Mikko Ritala, Markku Leskelä, Enrique Miranda
-based MIM capacitors. Microelectron. Reliab. 54 (9-10) (2014)
X. Saura, X. Lian, David Jiménez, Enrique Miranda, Xavier Borrisé, Francesca Campabadal, Jordi Suñé
based MIM structures. Microelectron. Reliab. 53 (9-11) (2013)
X. Saura, D. Moix, Jordi Suñé, Paul K. Hurley, Enrique Miranda
Direct observation of the generation of breakdown spots in MIM structures under constant voltage stress. Microelectron. Reliab. 53 (9-11) (2013)
Enrique Miranda, Takamasa Kawanago, Kuniyuki Kakushima, Jordi Suñé, Hiroshi Iwai
Analysis and modeling of the gate leakage current in advanced nMOSFET devices with severe gate-to-drain dielectric breakdown. Microelectron. Reliab. 52 (9-10) (2012)
Ernest Y. Wu, Jordi Suñé
Power-law voltage acceleration: A key element for ultra-thin gate oxide reliability. Microelectron. Reliab. 45 (12) (2005)
Enrique Miranda, Jordi Suñé
layers in MOS devices. Microelectron. Reliab. 44 (1) (2004)
Jordi Suñé, Ernest Y. Wu, David Jiménez, Wing L. Lai
gate oxides. Microelectron. Reliab. 43 (8) (2003)
Ernest Y. Wu, Jordi Suñé, Wing L. Lai, Alex Vayshenker, Edward J. Nowak, David L. Harmon
-based dielectric to its limit. Microelectron. Reliab. 43 (8) (2003)
Xavier Oriols, Jordi Suñé
Study of Electronic Transport in Tunneling Devices Using an Incoherent Superposition of Time Dependent Wave Packets. VLSI Design 2001 (1) (2001)