Power-law voltage acceleration: A key element for ultra-thin gate oxide reliability.

Ernest Y. Wu Jordi Suñé

Published in: Microelectron. Reliab. (2005)

Keyphrases

power law
silicon dioxide
field effect transistors
scale free
room temperature
electrical properties
steady state
high speed
small world
long range correlations
power law distribution
power system
leakage current
learning curves
mathematical analysis
metal oxide
low voltage
clustering coefficient
complex networks