Ernest Y. Wu

Publication Activity (10 Years)

Years Active: 2002-2024
Publications (10 Years): 11

Top Topics

Statistical Distribution

Reliability Assessment

Spatial Clustering

Top Venues

Publications

Huimei Zhou, Miaomiao Wang, Ernest Y. Wu
Challenges of Gate Stack TDDB in Gate-All-Around Nanosheet Towards Further Scaling. IRPS (2024)
Ernest Y. Wu, Takashi Ando, Paul Jamison
General Statistical Model for Dielectric Breakdown Including Reverse Area Scaling - The Role of Area-Dependent Dynamic Competition. IRPS (2024)
Ernest Y. Wu, Brian T. McGowan, Ronald Bolam, Huai Huang, Huimei Zhou, Miaomiao Wang
A New Clustering-Function-Based Formulation of Temporal and Spatial Clustering Model Involving Area Scaling and its Application to Parameter Extraction. IRPS (2024)
Ernest Y. Wu, Ron Bolam, Baozhen Li, Tian Shen, Barry P. Linder, Griselda Bonilla, Miaomiao Wang, Dechao Guo
A Flexible and Inherently Self-Consistent Methodology for MOL/BEOL/MIMCAP TDDB Applications with Excessive Variability-Induced Degradation. IRPS (2022)
Franco Stellari, Ernest Y. Wu, Martin M. Frank, Leonidas E. Ocala, Takashi Ando, Peilin Song
Filament Localization and Characterization in Hf02 ReRAM Cells using Laser Stimulation. ESSDERC (2022)
Ernest Y. Wu, Baozhen Li
Quantum Mechanical Connection of Schottky Emission Process and Its implications on Breakdown Methodology and Conduction Modeling for BEOL Low-k Dielectrics. IRPS (2022)
Eduard A. Cartier, Wanki Kim, Nanbo Gong, Tayfun Gokmen, Martin M. Frank, Douglas M. Bishop, Youngseok Kim, Seyoung Kim, Takashi Ando, Ernest Y. Wu, Praneet Adusumilli, John Rozen, Paul M. Solomon, Wilfried Haensch, Matthew J. BrightSky, Abu Sebastian, Geoffrey W. Burr, Vijay Narayanan
Reliability Challenges with Materials for Analog Computing. IRPS (2019)
Andrew Kim, Ernest Y. Wu, Baozhen Li, Barry P. Linder
Transformation of Ramped Current Stress VBDto Constant Voltage Stress TDDB TBD. IRPS (2019)
Ernest Y. Wu, Baozhen Li, James H. Stathis, Andrew Kim
Comprehensive Methodology for Multiple Spots Competing Progressive Breakdown for BEOL/FEOL Applications. IRPS (2019)
Ernest Y. Wu, Andrew Kim, Baozhen Li, James H. Stathis
Elapsed-time statistics of successive breakdown in the presence of variability for dielectric breakdown in BEOL/MOL/FEOL applications. IRPS (2018)
Ernest Y. Wu, James H. Stathis, Baozhen Li, Barry P. Linder, Kai Zhao, Griselda Bonilla
A critical analysis of sampling-based reconstruction methodology for dielectric breakdown systems (BEOL/MOL/FEOL). IRPS (2015)
Barry P. Linder, Eduard Cartier, S. Krishnan, Ernest Y. Wu
Improving and optimizing reliability in future technologies with high-κ dielectrics. VLSI-DAT (2013)
Ernest Y. Wu, Jordi Suñé
Power-law voltage acceleration: A key element for ultra-thin gate oxide reliability. Microelectron. Reliab. 45 (12) (2005)
Jordi Suñé, Ernest Y. Wu, David Jiménez, Wing L. Lai
gate oxides. Microelectron. Reliab. 43 (8) (2003)
Ernest Y. Wu, Jordi Suñé, Wing L. Lai, Alex Vayshenker, Edward J. Nowak, David L. Harmon
-based dielectric to its limit. Microelectron. Reliab. 43 (8) (2003)
Ernest Y. Wu, Edward J. Nowak, Alex Vayshenker, Wing L. Lai, David L. Harmon
CMOS scaling beyond the 100-nm node with silicon-dioxide-based gate dielectrics. IBM J. Res. Dev. 46 (2-3) (2002)