Barry P. Linder

Publication Activity (10 Years)

Years Active: 2002-2022
Publications (10 Years): 6

Top Topics

Noisy Measurements

Electronic Devices

Top Venues

Publications

Ernest Y. Wu, Ron Bolam, Baozhen Li, Tian Shen, Barry P. Linder, Griselda Bonilla, Miaomiao Wang, Dechao Guo
A Flexible and Inherently Self-Consistent Methodology for MOL/BEOL/MIMCAP TDDB Applications with Excessive Variability-Induced Degradation. IRPS (2022)
Andrew Kim, Ernest Y. Wu, Baozhen Li, Barry P. Linder
Transformation of Ramped Current Stress VBDto Constant Voltage Stress TDDB TBD. IRPS (2019)
Elnatan Mataev, James H. Stathis, Giuseppe La Rosa, Barry P. Linder
Long Term NBTI Relaxation Under AC and DC Biased Stress and Recovery. IRPS (2019)
Baozhen Li, Andrew Kim, Paul McLaughlin, Barry P. Linder, Cathryn Christiansen
Electromigration characteristics of power grid like structures. IRPS (2018)
Andrew Kim, Baozhen Li, Barry P. Linder
Transient self-heating modeling and simulations of back-end-of-line interconnects. IRPS (2018)
Franco Stellari, Alan J. Weger, Keith A. Jenkins, Giuseppe La Rosa, Barry P. Linder, Peilin Song
Estimating transistor channel temperature using time-resolved and time-integrated NIR emission. IRPS (2018)
Franco Stellari, Keith A. Jenkins, Alan J. Weger, Barry P. Linder, Peilin Song
Self-heating characterization of FinFET SOI devices using 2D time resolved emission measurements. IRPS (2015)
Ernest Y. Wu, James H. Stathis, Baozhen Li, Barry P. Linder, Kai Zhao, Griselda Bonilla
A critical analysis of sampling-based reconstruction methodology for dielectric breakdown systems (BEOL/MOL/FEOL). IRPS (2015)
Emily Ray, Barry P. Linder, Raphael Robertazzi, Kevin Stawiasz, Alan J. Weger, Emmanuel Yashchin, James H. Stathis, Peilin Song
Analyzing path delays for accelerated testing of logic chips. IRPS (2015)
Barry P. Linder, Eduard Cartier, S. Krishnan, Ernest Y. Wu
Improving and optimizing reliability in future technologies with high-κ dielectrics. VLSI-DAT (2013)
James H. Stathis, Barry P. Linder, Rosana Rodríguez, Salvatore Lombardo
Reliability of ultra-thin oxides in CMOS circuits. Microelectron. Reliab. 43 (9-11) (2003)
James H. Stathis, Rosana Rodríguez, Barry P. Linder
Circuit implications of gate oxide breakdown. Microelectron. Reliab. 43 (8) (2003)
Rosana Rodríguez, James H. Stathis, Barry P. Linder, Rajiv V. Joshi, Ching-Te Chuang
Influence and model of gate oxide breakdown on CMOS inverters. Microelectron. Reliab. 43 (9-11) (2003)
Rosana Rodríguez, James H. Stathis, Barry P. Linder, Steven P. Kowalczyk, Ching-Te Chuang, Rajiv V. Joshi, Gregory A. Northrop, Kerry Bernstein, Azeez J. Bhavnagarwala, Salvatore Lombardo
Analysis of the effect of the gate oxide breakdown on SRAM stability. Microelectron. Reliab. 42 (9-11) (2002)
Salvatore Lombardo, James H. Stathis, Barry P. Linder
Dependence of Post-Breakdown Conduction on Gate Oxide Thickness. Microelectron. Reliab. 42 (9-11) (2002)