James H. Stathis

Publication Activity (10 Years)

Years Active: 2002-2019
Publications (10 Years): 9

Top Topics

Field Effect Transistors

Practical Issues

Top Venues

Microelectron. Reliab.

Publications

Ernest Y. Wu, Baozhen Li, James H. Stathis, Andrew Kim
Comprehensive Methodology for Multiple Spots Competing Progressive Breakdown for BEOL/FEOL Applications. IRPS (2019)
Narendra Parihar, Uma Sharma, Richard G. Southwick, Miaomiao Wang, James H. Stathis, Souvik Mahapatra
On the Frequency Dependence of Bulk Trap Generation During AC Stress in Si and SiGe RMG P-FinFETs. IRPS (2019)
Miaomiao Wang, Jingyun Zhang, Huimei Zhou, Richard G. Southwick, Robin Hsin Kuo Chao, Xin Miao, Veeraraghavan S. Basker, Tenko Yamashita, Dechao Guo, Gauri Karve, Huiming Bu, James H. Stathis
Bias Temperature Instability Reliability in Stacked Gate-All-Around Nanosheet Transistor. IRPS (2019)
Elnatan Mataev, James H. Stathis, Giuseppe La Rosa, Barry P. Linder
Long Term NBTI Relaxation Under AC and DC Biased Stress and Recovery. IRPS (2019)
James H. Stathis, Souvik Mahapatra, Tibor Grasser
Controversial issues in negative bias temperature instability. Microelectron. Reliab. 81 (2018)
Miaomiao Wang, Richard G. Southwick, Kangguo Cheng, James H. Stathis
Lateral profiling of HCI induced damage in ultra-scaled FinFET devices with Id-Vd characteristics. IRPS (2018)
Ernest Y. Wu, Andrew Kim, Baozhen Li, James H. Stathis
Elapsed-time statistics of successive breakdown in the presence of variability for dielectric breakdown in BEOL/MOL/FEOL applications. IRPS (2018)
James H. Stathis
The physics of NBTI: What do we really know? IRPS (2018)
Miaomiao Wang, Xin Miao, James H. Stathis, Richard G. Southwick
Hot carrier reliability in ultra-scaled sige channel p-FinFETs. ASICON (2017)
Miaomiao Wang, Zuoguang Liu, Tenko Yamashita, James H. Stathis, Chia-Yu Chen
Separation of interface states and electron trapping for hot carrier degradation in ultra-scaled replacement metal gate n-FinFET. IRPS (2015)
Ernest Y. Wu, James H. Stathis, Baozhen Li, Barry P. Linder, Kai Zhao, Griselda Bonilla
A critical analysis of sampling-based reconstruction methodology for dielectric breakdown systems (BEOL/MOL/FEOL). IRPS (2015)
Emily Ray, Barry P. Linder, Raphael Robertazzi, Kevin Stawiasz, Alan J. Weger, Emmanuel Yashchin, James H. Stathis, Peilin Song
Analyzing path delays for accelerated testing of logic chips. IRPS (2015)
Subhasish Mitra, Pradip Bose, Eric Cheng, Chen-Yong Cher, Hyungmin Cho, Rajiv V. Joshi, Young Moon Kim, Charles R. Lefurgy, Yanjing Li, Kenneth P. Rodbell, Kevin Skadron, James H. Stathis, Lukasz G. Szafaryn
The resilience wall: Cross-layer solution strategies. VLSI-DAT (2014)
James H. Stathis, M. Wang, K. Zhao
Reliability of advanced high-k/metal-gate n-FET devices. Microelectron. Reliab. 50 (9-11) (2010)
Aditya Bansal, Rahul M. Rao, Jae-Joon Kim, Sufi Zafar, James H. Stathis, Ching-Te Chuang
Impacts of NBTI and PBTI on SRAM static/dynamic noise margins and cell failure probability. Microelectron. Reliab. 49 (6) (2009)
R. Pagano, Salvatore Lombardo, Felix Palumbo, Paul Kirsch, S. A. Krishnan, Chadwin D. Young, Rino Choi, Gennadi Bersuker, James H. Stathis
A novel approach to characterization of progressive breakdown in high-k/metal gate stacks. Microelectron. Reliab. 48 (11-12) (2008)
Javier Martín-Martínez, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich, James H. Stathis
Worn-out oxide MOSFET characteristics: Role of gate current and device parameters on a current mirror. Microelectron. Reliab. 47 (4-5) (2007)
Esteve Amat, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich, James H. Stathis
stacks subjected to static and dynamic stress conditions. Microelectron. Reliab. 47 (4-5) (2007)
James H. Stathis, Sufi Zafar
The negative bias temperature instability in MOS devices: A review. Microelectron. Reliab. 46 (2-4) (2006)
James H. Stathis, Barry P. Linder, Rosana Rodríguez, Salvatore Lombardo
Reliability of ultra-thin oxides in CMOS circuits. Microelectron. Reliab. 43 (9-11) (2003)
James H. Stathis, Rosana Rodríguez, Barry P. Linder
Circuit implications of gate oxide breakdown. Microelectron. Reliab. 43 (8) (2003)
Rosana Rodríguez, James H. Stathis, Barry P. Linder, Rajiv V. Joshi, Ching-Te Chuang
Influence and model of gate oxide breakdown on CMOS inverters. Microelectron. Reliab. 43 (9-11) (2003)
Rosana Rodríguez, James H. Stathis, Barry P. Linder, Steven P. Kowalczyk, Ching-Te Chuang, Rajiv V. Joshi, Gregory A. Northrop, Kerry Bernstein, Azeez J. Bhavnagarwala, Salvatore Lombardo
Analysis of the effect of the gate oxide breakdown on SRAM stability. Microelectron. Reliab. 42 (9-11) (2002)
James H. Stathis
Reliability limits for the gate insulator in CMOS technology. IBM J. Res. Dev. 46 (2-3) (2002)
Salvatore Lombardo, James H. Stathis, Barry P. Linder
Dependence of Post-Breakdown Conduction on Gate Oxide Thickness. Microelectron. Reliab. 42 (9-11) (2002)