Montserrat Nafría

Publication Activity (10 Years)

Years Active: 2001-2023
Publications (10 Years): 43

Top Topics

Pareto Optimality

Experimental Verification

Evolvable Hardware

Top Venues

Microelectron. Reliab.

Publications

Javier Martín-Martínez, Javier Diaz-Fortuny, Pablo Saraza-Canflanca, Rosana Rodríguez, Rafael Castro-López, Elisenda Roca, Francisco V. Fernández, Montserrat Nafría
Challenges and solutions to the defect-centric modeling and circuit simulation of time-dependent variability. IRPS (2023)
Francisco V. Fernández, Elisenda Roca, Pablo Saraza-Canflanca, Javier Martín-Martínez, Rosana Rodríguez, Montserrat Nafría, Rafael Castro-López
Strategies for parameter extraction of the time constant distribution of time-dependent variability models for nanometer-scale devices. SMACD (2023)
Pablo Saraza-Canflanca, Rafael Castro-López, Elisenda Roca, Javier Martín-Martínez, Rosana Rodríguez, Montserrat Nafría, Francisco V. Fernández
On the Impact of the Biasing History on the Characterization of Random Telegraph Noise. IEEE Trans. Instrum. Meas. 71 (2022)
Pablo Saraza-Canflanca, Javier Martín-Martínez, Elisenda Roca, Rafael Castro-López, Rosana Rodríguez, Montserrat Nafría, Francisco V. Fernández
A systematic approach to RTN parameter fitting based on the Maximum Current Fluctuation. SMACD (2022)
Rosana Rodríguez, Javier Martín-Martínez, Emili Salvador Aguilera, Albert Crespo-Yepes, Enrique Miranda, Montserrat Nafría, Antonio Rubio, Vasileios G. Ntinas, Georgios Ch. Sirakoulis
Beneficial Role of Noise in Hf-based Memristors. ISCAS (2022)
Ana Ruiz, Carlos Couso, Natalia Seoane, Marc Porti, Antonio J. García-Loureiro, Montserrat Nafría
Methodology for the Simulation of the Variability of MOSFETs With Polycrystalline High-k Dielectrics Using CAFM Input Data. IEEE Access 9 (2021)
Vasileios G. Ntinas, Antonio Rubio, Georgios Ch. Sirakoulis, Emili Salvador Aguilera, Marta Pedro, Albert Crespo-Yepes, Javier Martín-Martínez, Rosana Rodríguez, Montserrat Nafría
Power-Efficient Noise-Induced Reduction of ReRAM Cell's Temporal Variability Effects. IEEE Trans. Circuits Syst. II Express Briefs 68 (4) (2021)
Pablo Saraza-Canflanca, Javier Diaz-Fortuny, Rafael Castro-López, Elisenda Roca, Javier Martín-Martínez, Rosana Rodríguez, Montserrat Nafría, Francisco V. Fernández
A robust and automated methodology for the analysis of Time-Dependent Variability at transistor level. Integr. 72 (2020)
Javier Diaz-Fortuny, Pablo Saraza-Canflanca, Rafael Castro-López, Elisenda Roca, Javier Martín-Martínez, Rosana Rodríguez, Francisco V. Fernández, Montserrat Nafría
Flexible Setup for the Measurement of CMOS Time-Dependent Variability With Array-Based Integrated Circuits. IEEE Trans. Instrum. Meas. 69 (3) (2020)
Rosana Rodríguez, Albert Crespo-Yepes, Javier Martín-Martínez, Montserrat Nafría, Xavier Aragonès, Diego Mateo, Enrique Barajas
Experimental Monitoring of Aging in CMOS RF Linear Power Amplifiers: Correlation Between Device and Circuit Degradation. IRPS (2020)
Vasileios G. Ntinas, Iosif-Angelos Fyrigos, Georgios Ch. Sirakoulis, Antonio Rubio, Javier Martín-Martínez, Rosana Rodríguez, Montserrat Nafría
Noise-induced Performance Enhancement of Variability-aware Memristor Networks. ICECS (2019)
Javier Diaz-Fortuny, Javier Martín-Martínez, Rosana Rodríguez, Rafael Castro-López, Elisenda Roca, Xavier Aragonès, Enrique Barajas, Diego Mateo, Francisco V. Fernández, Montserrat Nafría
A Versatile CMOS Transistor Array IC for the Statistical Characterization of Time-Zero Variability, RTN, BTI, and HCI. IEEE J. Solid State Circuits 54 (2) (2019)
Juan Núñez, Elisenda Roca, Rafael Castro-López, Javier Martín-Martínez, Rosana Rodríguez, Montserrat Nafría, Francisco V. Fernández
Experimental Characterization of Time-Dependent Variability in Ring Oscillators. SMACD (2019)
Pablo Saraza-Canflanca, Javier Diaz-Fortuny, Rafael Castro-López, Elisenda Roca Moreno, Javier Martín-Martínez, Rosana Rodríguez, Montserrat Nafría, Francisco V. Fernández
New method for the automated massive characterization of Bias Temperature Instability in CMOS transistors. DATE (2019)
Pablo Saraza-Canflanca, Javier Diaz-Fortuny, Rafael Castro-López, Elisenda Roca, Javier Martín-Martínez, Rosana Rodríguez, Montserrat Nafría, Francisco V. Fernández
TiDeVa: A Toolbox for the Automated and Robust Analysis of Time-Dependent Variability at Transistor Level. SMACD (2019)
Pablo Martín-Lloret, Juan Núñez, Elisenda Roca, Rafael Castro-López, Javier Martín-Martínez, Rosana Rodríguez, Montserrat Nafría, Francisco V. Fernández
An IC Array for the Statistical Characterization of Time-Dependent Variability of Basic Circuit Blocks. SMACD (2019)
Xavier Aragonès, Diego Mateo, Enrique Barajas, Albert Crespo-Yepes, Rosana Rodríguez, Javier Martín-Martínez, Montserrat Nafría
Aging in CMOS RF Linear Power Amplifiers: Experimental Comparison and Modeling. ISCAS (2019)
G. Pedreira, Javier Martín-Martínez, Javier Diaz-Fortuny, Pablo Saraza-Canflanca, Rosana Rodríguez, Rafael Castro-López, Elisenda Roca, Francisco V. Fernández, Montserrat Nafría
A New Time Efficient Methodology for the Massive Characterization of RTN in CMOS Devices. IRPS (2019)
Antonio Toro-Frías, Pablo Saraza-Canflanca, Fábio Passos, Pablo Martín-Lloret, Rafael Castro-López, Elisenda Roca, Javier Martín-Martínez, Rosana Rodríguez, Montserrat Nafría, Francisco V. Fernández
Generation of Lifetime-Aware Pareto-Optimal Fronts Using a Stochastic Reliability Simulator. DATE (2019)
Vasileios G. Ntinas, Antonio Rubio, Georgios Ch. Sirakoulis, Rosana Rodríguez, Montserrat Nafría
Experimental Investigation of Memristance Enhancement. NANOARCH (2019)
Marcos Maestro-Izquierdo, Javier Martín-Martínez, Albert Crespo-Yepes, Manel Escudero, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich, Antonio Rubio
Experimental Verification of Memristor-Based Material Implication NAND Operation. IEEE Trans. Emerg. Top. Comput. 7 (4) (2019)
Victor M. van Santen, Javier Martín-Martínez, Hussam Amrouch, Montserrat Nafría, Jörg Henkel
Reliability in Super- and Near-Threshold Computing: A Unified Model of RTN, BTI, and PV. IEEE Trans. Circuits Syst. I Regul. Pap. (1) (2018)
Victor M. van Santen, Javier Diaz-Fortuny, Hussam Amrouch, Javier Martín-Martínez, Rosana Rodríguez, Rafael Castro-López, Elisenda Roca, Francisco V. Fernández, Jörg Henkel, Montserrat Nafría
Weighted time lag plot defect parameter extraction and GPU-based BTI modeling for BTI variability. IRPS (2018)
Pablo Saraza-Canflanca, D. Malagon, Fábio Passos, A. Toro, Juan Núñez, Javier Diaz-Fortuny, Rafael Castro-López, Elisenda Roca, Javier Martín-Martínez, Rosana Rodríguez, Montserrat Nafría, Francisco V. Fernández
Design Considerations of an SRAM Array for the Statistical Validation of Time-Dependent Variability Models. SMACD (2018)
Enrique Barajas, Xavier Aragonès, Diego Mateo, Francesc Moll, Antonio Rubio, Javier Martín-Martínez, Rosana Rodríguez, Marc Porti, Montserrat Nafría, Rafael Castro-López, Elisenda Roca, Francisco V. Fernández
Analysis of Body Bias and RTN-Induced Frequency Shift of Low Voltage Ring Oscillators in FDSOI Technology. PATMOS (2018)
Javier Diaz-Fortuny, Javier Martín-Martínez, Rosana Rodríguez, Montserrat Nafría, Rafael Castro-López, Elisenda Roca, Francisco V. Fernández
CMOS Characterization and Compact Modelling for Circuit Reliability Simulation. IOLTS (2018)
Marta Pedro, Javier Martín-Martínez, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich
Investigation of Conductivity Changes in Memristors under Massive Pulsed Characterization. DCIS (2018)
Antonio Toro-Frías, Pablo Martín-Lloret, Javier Martín-Martínez, Rafael Castro-López, Elisenda Roca, Rosana Rodríguez, Montserrat Nafría, Francisco V. Fernández
Lifetime Calculation Using a Stochastic Reliability Simulator for Analog ICs. SMACD (2018)
Marta Pedro, Javier Martín-Martínez, E. Miranda, Rosana Rodríguez, Montserrat Nafría, M. B. González, Francesca Campabadal
Device variability tolerance of a RRAM-based self-organizing neuromorphic system. IRPS (2018)
Javier Diaz-Fortuny, Pablo Saraza-Canflanca, Antonio Toro-Frías, Rafael Castro-López, Javier Martín-Martínez, Elisenda Roca, Rosana Rodríguez, Francisco V. Fernández, Montserrat Nafría
A Model Parameter Extraction Methodology Including Time-Dependent Variability for Circuit Reliability Simulation. SMACD (2018)
Pablo Saraza-Canflanca, Javier Diaz-Fortuny, Antonio Toro-Frías, Rafael Castro-López, Elisenda Roca, Javier Martín-Martínez, Rosana Rodríguez, Montserrat Nafría, Francisco V. Fernández
Automated Massive RTN Characterization Using a Transistor Array Chip. SMACD (2018)
Javier Martín-Martínez, Rosana Rodríguez, Montserrat Nafría, Gabriel Torrens, Sebastià A. Bota, Jaume Segura, Francesc Moll, Antonio Rubio
Statistical characterization and modeling of random telegraph noise effects in 65nm SRAMs cells. SMACD (2017)
Javier Diaz-Fortuny, Javier Martín-Martínez, Rosana Rodríguez, Montserrat Nafría, Rafael Castro-López, Elisenda Roca, Francisco V. Fernández, Enrique Barajas, Xavier Aragonès, Diego Mateo
A transistor array chip for the statistical characterization of process variability, RTN and BTI/CHC aging. SMACD (2017)
Pablo Martín-Lloret, Antonio Toro-Frías, Rafael Castro-López, Elisenda Roca, Francisco V. Fernández, Javier Martín-Martínez, Rosana Rodríguez, Montserrat Nafría
CASE: A reliability simulation tool for analog ICs. SMACD (2017)
Tobias Berthold, Guenther Benstetter, Werner Frammelsberger, Manuel Bogner, Rosana Rodríguez, Montserrat Nafría
Protective nanometer films for reliable Cu-Cu connections. Microelectron. Reliab. (2017)
Javier Diaz-Fortuny, Javier Martín-Martínez, Rosana Rodríguez, Montserrat Nafría, Rafael Castro-López, Elisenda Roca, Francisco V. Fernández
TARS: A toolbox for statistical reliability modeling of CMOS devices. SMACD (2017)
Antonio Toro-Frías, Pablo Martín-Lloret, Rafael Castro-López, Elisenda Roca, Francisco V. Fernández, Javier Martín-Martínez, Rosana Rodríguez, Montserrat Nafría
Including a stochastic model of aging in a reliability simulation flow. SMACD (2017)
Pablo Martín-Lloret, Antonio Toro-Frías, Javier Martín-Martínez, Rafael Castro-López, Elisenda Roca, Rosana Rodríguez, Montserrat Nafría, Francisco V. Fernández
A size-adaptive time-step algorithm for accurate simulation of aging in analog ICs. ISCAS (2017)
Victor M. van Santen, Hussam Amrouch, Javier Martín-Martínez, Montserrat Nafría, Jörg Henkel
Designing guardbands for instantaneous aging effects. DAC (2016)
Antonio Toro-Frías, Pablo Martín-Lloret, Javier Martín-Martínez, Rafael Castro-López, Elisenda Roca, Rosana Rodríguez, Montserrat Nafría, Francisco V. Fernández
Reliability simulation for analog ICs: Goals, solutions, and challenges. Integr. 55 (2016)
Hussam Amrouch, Javier Martín-Martínez, Victor M. van Santen, Miquel Moras, Rosana Rodríguez, Montserrat Nafría, Jörg Henkel
Connecting the physical and application level towards grasping aging effects. IRPS (2015)
Violaine Iglesias, Marc Porti, Carlos Couso, Q. Wu, S. Claramunt, Montserrat Nafría, Enrique Miranda, Neus Domingo, Gennadi Bersuker, Aaron Cordes
Threading dislocations in III-V semiconductors: Analysis of electrical conduction. IRPS (2015)
V. Velayudhan, Javier Martín-Martínez, Marc Porti, Carlos Couso, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich, Carlos Marquez, Francisco Gámiz
Threshold voltage and on-current Variability related to interface traps spatial distribution. ESSDERC (2015)
Javier Martín-Martínez, Carmen G. Almudéver, Albert Crespo-Yepes, Rosana Rodríguez, Montserrat Nafría, Antonio Rubio
A shapeshifting evolvable hardware mechanism based on reconfigurable memFETs crossbar architecture. Microelectron. Reliab. 54 (8) (2014)
V. Velayudhan, Francisco Gámiz, Javier Martín-Martínez, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich
Influence of the interface trap location on the performance and variability of ultra-scaled MOSFETs. Microelectron. Reliab. 53 (9-11) (2013)
Albert Crespo-Yepes, Javier Martín-Martínez, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich
Resistive switching like-behavior in MOSFETs with ultra-thin HfSiON dielectric gate stack: pMOS and nMOS comparison and reliability implications. Microelectron. Reliab. 53 (9-11) (2013)
Albin Bayerl, Mario Lanza, Lidia Aguilera, Marc Porti, Montserrat Nafría, Xavier Aymerich, Stefan De Gendt
Nanoscale and device level electrical behavior of annealed ALD Hf-based gate oxide stacks grown with different precursors. Microelectron. Reliab. 53 (6) (2013)
Violaine Iglesias, Mario Lanza, Albin Bayerl, Marc Porti, Montserrat Nafría, Xavier Aymerich, Lifeng Liu, Jinfeng Kang, Gennadi Bersuker, Kai Zhang, Ziyong Shen
/Pt structures. Microelectron. Reliab. 52 (9-10) (2012)
Carmen G. Almudéver, Antonio Rubio, Javier Martín-Martínez, Albert Crespo-Yepes, Rosana Rodríguez, Montserrat Nafría
Shape-shifting digital hardware concept: Towards a new adaptive computing system. AHS (2012)
Nuria Ayala, Javier Martín-Martínez, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich
Unified characterization of RTN and BTI for circuit performance and variability simulation. ESSDERC (2012)
Nuria Ayala, Javier Martín-Martínez, Rosana Rodríguez, M. B. González, Montserrat Nafría, Xavier Aymerich, Eddy Simoen
Characterization and SPICE modeling of the CHC related time-dependent variability in strained and unstrained pMOSFETs. Microelectron. Reliab. 52 (9-10) (2012)
Javier Martín-Martínez, Esteve Amat, M. B. González, P. Verheyen, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich, Eddy Simoen
S/D and HfSiON based pMOS transistors. Microelectron. Reliab. 50 (9-11) (2010)
Mario Lanza, Marc Porti, Montserrat Nafría, Xavier Aymerich, E. Whittaker, B. Hamilton
UHV CAFM characterization of high-k dielectrics: Effect of the technique resolution on the pre- and post-breakdown electrical measurements. Microelectron. Reliab. 50 (9-11) (2010)
Albert Crespo-Yepes, Javier Martín-Martínez, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich
Reversible dielectric breakdown in ultrathin Hf based high-k stacks under current-limited stresses. Microelectron. Reliab. 49 (9-11) (2009)
Mario Lanza, Marc Porti, Montserrat Nafría, Xavier Aymerich, G. Ghidini, A. Sebastiani
layers of de-processed MOS non-volatile memory devices observed at the nanoscale. Microelectron. Reliab. 49 (9-11) (2009)
Georges G. E. Gielen, Pieter De Wit, Elie Maricau, Johan Loeckx, Javier Martín-Martínez, Ben Kaczer, Guido Groeseneken, Rosana Rodríguez, Montserrat Nafría
Emerging Yield and Reliability Challenges in Nanometer CMOS Technologies. DATE (2008)
W. Polspoel, Wilfried Vandervorst, Lidia Aguilera, Marc Porti, Montserrat Nafría, Xavier Aymerich
Nanometer-scale leakage measurements in high vacuum on de-processed high-k capacitors. Microelectron. Reliab. 48 (8-9) (2008)
Mario Lanza, Marc Porti, Montserrat Nafría, Guenther Benstetter, Werner Frammelsberger, Heiko Ranzinger, E. Lodermeier, G. Jaschke
Influence of the manufacturing process on the electrical properties of thin (k stacks observed with CAFM. Microelectron. Reliab. 47 (9-11) (2007)
Javier Martín-Martínez, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich, James H. Stathis
Worn-out oxide MOSFET characteristics: Role of gate current and device parameters on a current mirror. Microelectron. Reliab. 47 (4-5) (2007)
Esteve Amat, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich, James H. Stathis
stacks subjected to static and dynamic stress conditions. Microelectron. Reliab. 47 (4-5) (2007)
Raul Fernández, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich
Effect of oxide breakdown on RS latches. Microelectron. Reliab. 47 (4-5) (2007)
Javier Martín-Martínez, Simone Gerardin, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich, Andrea Cester, Alessandro Paccagnella, G. Ghidini
Lifetime estimation of analog circuits from the electrical characteristics of stressed MOSFETs. Microelectron. Reliab. 47 (9-11) (2007)
Raul Fernández, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich, Ben Kaczer, Guido Groeseneken
FinFET and MOSFET preliminary comparison of gate oxide reliability. Microelectron. Reliab. 46 (9-11) (2006)
Lidia Aguilera, Marc Porti, Montserrat Nafría, Xavier Aymerich
MOS gate stacks observed at the nanoscale. Microelectron. Reliab. 45 (9-11) (2005)
X. Blasco, Montserrat Nafría, Xavier Aymerich, J. Pétry, Wilfried Vandervorst
stacks observed with enhanced - CAFM. Microelectron. Reliab. 45 (5-6) (2005)
Raul Fernández, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich
Influence of oxide breakdown position and device aspect ratio on MOSFET's output characteristics. Microelectron. Reliab. 45 (5-6) (2005)
Marc Porti, S. Meli, Montserrat Nafría, Xavier Aymerich
Standard and C-AFM tests to study the post-BD gate oxide conduction of MOS devices after current limited stresses. Microelectron. Reliab. 44 (9-11) (2004)
Raul Fernández, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich
A new approach to the modeling of oxide breakdown on CMOS circuits. Microelectron. Reliab. 44 (9-11) (2004)
Marc Porti, S. Meli, Montserrat Nafría, Xavier Aymerich
layers of MOS devices observed with C-AFM. Microelectron. Reliab. 43 (8) (2003)
Marc Porti, Montserrat Nafría, Xavier Aymerich
Oxide conductivity increase during the progressive-breakdown of SiO2 gate oxides observed with C-AFM. Microelectron. Reliab. 43 (9-11) (2003)
X. Blasco, Montserrat Nafría, Xavier Aymerich
Gate Oxide on MOS Structures. Microelectron. Reliab. 42 (9-11) (2002)
Rosana Rodríguez, Marc Porti, Montserrat Nafría, Xavier Aymerich
films. Microelectron. Reliab. 41 (7) (2001)
Marc Porti, X. Blasco, Montserrat Nafría, Xavier Aymerich, Alexander Olbrich, Bernd Ebersberger
films observed with conductive atomic force microscope. Microelectron. Reliab. 41 (7) (2001)
Daniel Hill, X. Blasco, Marc Porti, Montserrat Nafría, Xavier Aymerich
on Si. Microelectron. Reliab. 41 (7) (2001)