Oxide conductivity increase during the progressive-breakdown of SiO2 gate oxides observed with C-AFM.
Marc PortiMontserrat NafríaXavier AymerichPublished in: Microelectron. Reliab. (2003)
Keyphrases
- leakage current
- silicon dioxide
- field effect transistors
- low voltage
- electrical properties
- steady state
- high density
- power line
- mathematical analysis
- machine learning
- high temperature
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- database systems
- data sets
- atomic force microscopy
- partially observed
- markov chain
- case study
- clustering algorithm
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- gate insulator