Marc Porti

Publication Activity (10 Years)

Years Active: 2001-2021
Publications (10 Years): 4

Top Topics

Spatial Distribution

Electrical Properties

Top Venues

Microelectron. Reliab.

Publications

Ana Ruiz, Carlos Couso, Natalia Seoane, Marc Porti, Antonio J. García-Loureiro, Montserrat Nafría
Methodology for the Simulation of the Variability of MOSFETs With Polycrystalline High-k Dielectrics Using CAFM Input Data. IEEE Access 9 (2021)
Enrique Barajas, Xavier Aragonès, Diego Mateo, Francesc Moll, Antonio Rubio, Javier Martín-Martínez, Rosana Rodríguez, Marc Porti, Montserrat Nafría, Rafael Castro-López, Elisenda Roca, Francisco V. Fernández
Analysis of Body Bias and RTN-Induced Frequency Shift of Low Voltage Ring Oscillators in FDSOI Technology. PATMOS (2018)
Violaine Iglesias, Marc Porti, Carlos Couso, Q. Wu, S. Claramunt, Montserrat Nafría, Enrique Miranda, Neus Domingo, Gennadi Bersuker, Aaron Cordes
Threading dislocations in III-V semiconductors: Analysis of electrical conduction. IRPS (2015)
V. Velayudhan, Javier Martín-Martínez, Marc Porti, Carlos Couso, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich, Carlos Marquez, Francisco Gámiz
Threshold voltage and on-current Variability related to interface traps spatial distribution. ESSDERC (2015)
Albin Bayerl, Mario Lanza, Lidia Aguilera, Marc Porti, Montserrat Nafría, Xavier Aymerich, Stefan De Gendt
Nanoscale and device level electrical behavior of annealed ALD Hf-based gate oxide stacks grown with different precursors. Microelectron. Reliab. 53 (6) (2013)
Violaine Iglesias, Mario Lanza, Albin Bayerl, Marc Porti, Montserrat Nafría, Xavier Aymerich, Lifeng Liu, Jinfeng Kang, Gennadi Bersuker, Kai Zhang, Ziyong Shen
/Pt structures. Microelectron. Reliab. 52 (9-10) (2012)
Mario Lanza, Marc Porti, Montserrat Nafría, Xavier Aymerich, E. Whittaker, B. Hamilton
UHV CAFM characterization of high-k dielectrics: Effect of the technique resolution on the pre- and post-breakdown electrical measurements. Microelectron. Reliab. 50 (9-11) (2010)
Mario Lanza, Marc Porti, Montserrat Nafría, Xavier Aymerich, G. Ghidini, A. Sebastiani
layers of de-processed MOS non-volatile memory devices observed at the nanoscale. Microelectron. Reliab. 49 (9-11) (2009)
W. Polspoel, Wilfried Vandervorst, Lidia Aguilera, Marc Porti, Montserrat Nafría, Xavier Aymerich
Nanometer-scale leakage measurements in high vacuum on de-processed high-k capacitors. Microelectron. Reliab. 48 (8-9) (2008)
Mario Lanza, Marc Porti, Montserrat Nafría, Guenther Benstetter, Werner Frammelsberger, Heiko Ranzinger, E. Lodermeier, G. Jaschke
Influence of the manufacturing process on the electrical properties of thin (k stacks observed with CAFM. Microelectron. Reliab. 47 (9-11) (2007)
Lidia Aguilera, Marc Porti, Montserrat Nafría, Xavier Aymerich
MOS gate stacks observed at the nanoscale. Microelectron. Reliab. 45 (9-11) (2005)
Marc Porti, S. Meli, Montserrat Nafría, Xavier Aymerich
Standard and C-AFM tests to study the post-BD gate oxide conduction of MOS devices after current limited stresses. Microelectron. Reliab. 44 (9-11) (2004)
Marc Porti, S. Meli, Montserrat Nafría, Xavier Aymerich
layers of MOS devices observed with C-AFM. Microelectron. Reliab. 43 (8) (2003)
Marc Porti, Montserrat Nafría, Xavier Aymerich
Oxide conductivity increase during the progressive-breakdown of SiO2 gate oxides observed with C-AFM. Microelectron. Reliab. 43 (9-11) (2003)
Rosana Rodríguez, Marc Porti, Montserrat Nafría, Xavier Aymerich
films. Microelectron. Reliab. 41 (7) (2001)
Marc Porti, X. Blasco, Montserrat Nafría, Xavier Aymerich, Alexander Olbrich, Bernd Ebersberger
films observed with conductive atomic force microscope. Microelectron. Reliab. 41 (7) (2001)
Daniel Hill, X. Blasco, Marc Porti, Montserrat Nafría, Xavier Aymerich
on Si. Microelectron. Reliab. 41 (7) (2001)