Esteve Amat

Publication Activity (10 Years)

Years Active: 2007-2018
Publications (10 Years): 10

Top Topics

Future Development

Top Venues

J. Low Power Electron.

Publications

Esteve Amat, Ramon Canal, Antonio Rubio
Modem Gain-Cell Memories in Advanced Technologies. IOLTS (2018)
Esteve Amat, Alberto del Moral, Joan R. Bausells, Francesc Pérez-Murano, Fabian J. Klüpfel
Quantum dot location relevance into SET-FET circuits based on FinFET devices. DCIS (2018)
Peyman Pouyan, Esteve Amat, Antonio Rubio
Memristive Crossbar Memory Lifetime Evaluation and Reconfiguration Strategies. IEEE Trans. Emerg. Top. Comput. 6 (2) (2018)
Esteve Amat, Antonio Calomarde, Ramon Canal, Antonio Rubio
Embedded DRAMs. J. Low Power Electron. 14 (2) (2018)
Peyman Pouyan, Esteve Amat, Said Hamdioui, Antonio Rubio
Resistive Random Access Memory Variability and Its Mitigation Schemes. J. Low Power Electron. 13 (1) (2017)
Esteve Amat, Antonio Calomarde, Ramon Canal, Antonio Rubio
Suitability of FinFET introduction into eDRAM cells for operate at sub-threshold level. PATMOS (2017)
Peyman Pouyan, Esteve Amat, Antonio Rubio
Monitoring SRAM BTI degradation by current-based tracking technique. NEWCAS (2016)
Esteve Amat, Antonio Calomarde, Francesc Moll, Ramon Canal, Antonio Rubio
Feasibility of Embedded DRAM Cells on FinFET Technology. IEEE Trans. Computers 65 (4) (2016)
Manish Rana, Ramon Canal, Esteve Amat, Antonio Rubio
Statistical analysis and comparison of 2T and 3T1D e-DRAM minimum energy operation. IOLTS (2016)
Peyman Pouyan, Esteve Amat, Said Hamdioui, Antonio Rubio
RRAM variability and its mitigation schemes. PATMOS (2016)
Esteve Amat, Antonio Calomarde, Ramon Canal, Antonio Rubio
Variability Influence on FinFET-Based On-Chip Memory Data Paths. J. Low Power Electron. 11 (2) (2015)
Peyman Pouyan, Esteve Amat, Antonio Rubio
Analysis and design of an adaptive proactive reconfiguration approach for memristive crossbar memories. NANOARCH (2015)
Edith Beigné, Jean-Frédéric Christmann, Alexandre Valentian, Olivier Billoint, Esteve Amat, Dominique Morche
UTBB FDSOI technology flexibility for ultra low power internet-of-things applications. ESSDERC (2015)
Peyman Pouyan, Esteve Amat, Antonio Rubio
Adaptive Proactive Reconfiguration: A Technique for Process-Variability- and Aging-Aware SRAM Cache Design. IEEE Trans. Very Large Scale Integr. Syst. 23 (9) (2015)
Peyman Pouyan, Esteve Amat, Antonio Rubio
Memristive crossbar design and test in non-adaptive proactive reconfiguring scheme. ECCTD (2015)
Peyman Pouyan, Esteve Amat, Antonio Rubio
Statistical lifetime analysis of memristive crossbar matrix. DTIS (2015)
Esteve Amat, Carmen G. Almudéver, Nivard Aymerich, Ramon Canal, Antonio Rubio
Strategies to enhance the 3T1D-DRAM cell variability robustness beyond 22 nm. Microelectron. J. 45 (10) (2014)
Antonio Calomarde, Esteve Amat, Francesc Moll, Julio Vigara, Antonio Rubio
SET and noise fault tolerant circuit design techniques: Application to 7 nm FinFET. Microelectron. Reliab. 54 (4) (2014)
Peyman Pouyan, Esteve Amat, Enrique Barajas, Antonio Rubio
Impact of adaptive proactive reconfiguration technique on Vmin and lifetime of SRAM caches. ISQED (2014)
Esteve Amat, E. Amatllé, Sergio Gómez, Nivard Aymerich, Carmen G. Almudéver, Francesc Moll, Antonio Rubio
Systematic and random variability analysis of two different 6T-SRAM layout topologies. Microelectron. J. 44 (9) (2013)
Esteve Amat, Carmen G. Almudéver, Nivard Aymerich, Antonio Rubio, Ramon Canal
Variability robustness enhancement for 7nm FinFET 3T1D-DRAM cells. MWSCAS (2013)
Antonio Calomarde, Esteve Amat, Francesc Moll, Antonio Rubio
A single event transient hardening circuit design technique based on strengthening. MWSCAS (2013)
Esteve Amat, Antonio Calomarde, Antonio Rubio
Reliability study on technology trends beyond 20nm. MIXDES (2013)
Peyman Pouyan, Esteve Amat, Francesc Moll, Antonio Rubio
Design and implementation of an adaptive proactive reconfiguration technique for SRAM caches. DATE (2013)
Esteve Amat, A. Asenov, Ramon Canal, B. Cheng, J.-Ll. Cruz, Zoran Jaksic, Miguel Miranda, Antonio Rubio, Paul Zuber
Analysis of FinFET technology on memories. IOLTS (2012)
Peyman Pouyan, Esteve Amat, Antonio Rubio
Process variability-aware proactive reconfiguration technique for mitigating aging effects in nano scale SRAM lifetime. VTS (2012)
Javier Martín-Martínez, Esteve Amat, M. B. González, P. Verheyen, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich, Eddy Simoen
S/D and HfSiON based pMOS transistors. Microelectron. Reliab. 50 (9-11) (2010)
Esteve Amat, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich, James H. Stathis
stacks subjected to static and dynamic stress conditions. Microelectron. Reliab. 47 (4-5) (2007)