A. Asenov

Publication Activity (10 Years)

Years Active: 1995-2018
Publications (10 Years): 2

Top Topics

Portable Devices

Carbon Nanotubes

Relevant Literature

Top Venues

Microelectron. Reliab.

Publications

B. Uhlig, J. Liang, J. Lee, Raphael Ramos, A. Dhavamani, N. Nagy, J. Dijon, H. Okuno, D. Kalita, Vihar P. Georgiev, A. Asenov, Salvatore M. Amoroso, Liping Wang, Campbell Millar, F. Konemann, Bernd Gotsmann, G. Goncalves, B. Chen, R. R. Pandey, R. Chen, Aida Todri-Sanial
Progress on carbon nanotube BEOL interconnects. DATE (2018)
A. Asenov, Yangang Wang, B. Cheng, Xingsheng Wang, Plamen Asenov, Talib Al-Ameri, Vihar P. Georgiev
Nanowire transistor solutions for 5nm and beyond. ISQED (2016)
Louis Gerrer, Vihar P. Georgiev, Salvatore M. Amoroso, Ewan Towie, A. Asenov
Comparison of Si and crystal orientation nanowire transistor reliability using Poisson-Schrödinger and classical simulations. Microelectron. Reliab. 55 (9-10) (2015)
A. Asenov, Jie Ding, Dave Reid, Plamen Asenov, Salvatore M. Amoroso, Fikru Adamu-Lema, Louis Gerrer
Unified approach for simulation of statistical reliability in nanoscale CMOS transistors from devices to circuits. ISCAS (2015)
Louis Gerrer, Jie Ding, Salvatore M. Amoroso, Fikru Adamu-Lema, Razaidi Hussin, Dave Reid, Campbell Millar, A. Asenov
Modelling RTN and BTI in nanoscale MOSFETs from device to circuit: A review. Microelectron. Reliab. 54 (4) (2014)
Esteve Amat, A. Asenov, Ramon Canal, B. Cheng, J.-Ll. Cruz, Zoran Jaksic, Miguel Miranda, Antonio Rubio, Paul Zuber
Analysis of FinFET technology on memories. IOLTS (2012)
Ramon Canal, Antonio Rubio, A. Asenov, A. Brown, Miguel Miranda, Paul Zuber, Antonio González, Xavier Vera
TRAMS Project: Variability and Reliability of SRAM Memories in sub-22 nm Bulk-CMOS Technologies. FET (2011)
Nivard Aymerich, A. Asenov, Andrew R. Brown, Ramon Canal, B. Cheng, Joan Figueras, Antonio González, Enric Herrero, S. Markov, Miguel Miranda, Peyman Pouyan, Tanausú Ramírez, Antonio Rubio, Elena I. Vatajelu, Xavier Vera, X. Wang, Paul Zuber
New reliability mechanisms in memory design for sub-22nm technologies. IOLTS (2011)
B. Cheng, Scott Roy, A. Asenov
The scalability of 8T-SRAM cells under the influence of intrinsic parameter fluctuations. ESSCIRC (2007)
A. Asenov, C. R. Stanley
A Virtual IC Factory in an Undergraduate Semiconductor Device Fabrication Laboratory. EUROSIM (1995)