TRAMS Project: Variability and Reliability of SRAM Memories in sub-22 nm Bulk-CMOS Technologies.
Ramon CanalAntonio RubioA. AsenovA. BrownMiguel MirandaPaul ZuberAntonio GonzálezXavier VeraPublished in: FET (2011)
Keyphrases
- power consumption
- cmos technology
- low power
- nm technology
- random access memory
- software internationalisation
- high speed
- current status
- low cost
- parallel processing
- case study
- advanced technologies
- knowledge workers
- microsoft research asia
- silicon on insulator
- delay insensitive
- power supply
- collaborative virtual environments
- analog vlsi
- data transmission
- project management
- future directions
- learning environment