New reliability mechanisms in memory design for sub-22nm technologies.
Nivard AymerichA. AsenovAndrew R. BrownRamon CanalB. ChengJoan FiguerasAntonio GonzálezEnric HerreroS. MarkovMiguel MirandaPeyman PouyanTanausú RamírezAntonio RubioElena I. VatajeluXavier VeraX. WangPaul ZuberPublished in: IOLTS (2011)