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New reliability mechanisms in memory design for sub-22nm technologies.

Nivard AymerichA. AsenovAndrew R. BrownRamon CanalB. ChengJoan FiguerasAntonio GonzálezEnric HerreroS. MarkovMiguel MirandaPeyman PouyanTanausú RamírezAntonio RubioElena I. VatajeluXavier VeraX. WangPaul Zuber
Published in: IOLTS (2011)
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