Bias Temperature Instability Reliability in Stacked Gate-All-Around Nanosheet Transistor.
Miaomiao WangJingyun ZhangHuimei ZhouRichard G. SouthwickRobin Hsin Kuo ChaoXin MiaoVeeraraghavan S. BaskerTenko YamashitaDechao GuoGauri KarveHuiming BuJames H. StathisPublished in: IRPS (2019)
Keyphrases
- silicon dioxide
- high temperature
- high speed
- leakage current
- field effect transistors
- integrated circuit
- low power
- metal oxide semiconductor
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