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Analysis and modeling of the gate leakage current in advanced nMOSFET devices with severe gate-to-drain dielectric breakdown.

Enrique MirandaTakamasa KawanagoKuniyuki KakushimaJordi SuñéHiroshi Iwai
Published in: Microelectron. Reliab. (2012)
Keyphrases
  • leakage current
  • silicon dioxide
  • low voltage
  • electrical properties
  • power line
  • power consumption
  • real time