Abhinav Kranti

Publication Activity (10 Years)

Years Active: 2009-2024
Publications (10 Years): 6

Top Topics

Silicon Dioxide

Physical Phenomena

Managerial Insights

Top Venues

IEEE Trans. Circuits Syst. I Regul. Pap.

Publications

Nivedita Rai, Sandeep Semwal, Rohit Kumar Nirala, Abhinav Kranti
Pragmatic Evaluation of Process Corners in ULP Subthreshold Circuits With Quantum Confinement Effects in Junctionless Nanowire Transistor. IEEE Trans. Circuits Syst. I Regul. Pap. 71 (1) (2024)
Manish Gupta, Abhinav Kranti
Optimization of Multiple Physical Phenomena through a Universal Metric in Junctionless Transistors. VLSI Design (2019)
Manish Gupta, Abhinav Kranti
Hysteresis Free sub-60 mV/dec Subthreshold Swing in Junctionless MOSFETs. VLSI Design (2018)
Md. Hasan Raza Ansari, Nupur Navlakha, Jyi-Tsong Lin, Abhinav Kranti
Emerging FETs for Low Power and High Speed Embedded Dynamic Random Access Memory. VLSI Design (2018)
Y. V. Bhuvaneshwari, Abhinav Kranti
Extraction and Analysis of Mobility in Double Gate Junctionless Transistor. VLSI Design (2017)
Manish Gupta, Abhinav Kranti
Suppressing Single Transistor Latch Effect in Energy Efficient Steep Switching Junctionless MOSFETs. VLSI Design (2017)
Mukta Singh Parihar, Fan Yu Liu, Carlos Navarro, Sylvain Barraud, Maryline Bawedin, Irina Ionica, Abhinav Kranti, Sorin Cristoloveanu
Back-gate effects and detailed characterization of junctionless transistor. ESSDERC (2015)
Mukta Singh Parihar, Abhinav Kranti
Performance Optimization and Parameter Sensitivity Analysis of Ultra Low Power Junctionless MOSFETs. VLSI Design (2014)
Mukta Singh Parihar, Abhinav Kranti
Volume accumulated double gate junctionless MOSFETs for low power logic technology applications. ISQED (2014)
Ran Yan, Abhinav Kranti, Isabelle Ferain, Chi-Woo Lee, Ran Yu, Nima Dehdashti, Pedram Razavi, Jean-Pierre Colinge
Investigation of high-performance sub-50 nm junctionless nanowire transistors. Microelectron. Reliab. 51 (7) (2011)
Abhinav Kranti, G. Alastair Armstrong
Nonclassical Channel Design in MOSFETs for Improving OTA Gain-Bandwidth Trade-Off. IEEE Trans. Circuits Syst. I Regul. Pap. (12) (2010)
Abhinav Kranti, G. Alastair Armstrong
Improving Operational transconductance Amplifier (OTA) gain-bandwidth tradeoff using gate-underlap MOSFETs. SoCC (2009)