Antonio Cerdeira

Publication Activity (10 Years)

Years Active: 2001-2016
Publications (10 Years): 4

Top Topics

Top Venues

Microelectron. Reliab.

Microelectron. J.

IET Circuits Devices Syst.

Publications

Y. Hernandez-Barrios, F. Avila-Herrera, Magali Estrada, Antonio Cerdeira, Oana Moldovan, Benjamín Iñíguez, Rodrigo Picos
Modeling the variation of threshold voltage, mobility factor and saturation coefficient in amorphous Indium-Gallium-Zinc Oxide thin film transistors. CCE (2016)
Antonio Cerdeira, Magali Estrada, Lluís F. Marsal, Josep Pallarès, Benjamín Iñíguez
On the series resistance in staggered amorphous thin film transistors. Microelectron. Reliab. 63 (2016)
Bruna Cardoso Paz, Mikaël Cassé, Sylvain Barraud, Gilles Reimbold, Olivier Faynot, F. Avila-Herrera, Antonio Cerdeira, Marcelo Antonio Pavanello
Drain current model for short-channel triple gate junctionless nanowire transistors. Microelectron. Reliab. 63 (2016)
Magali Estrada, M. Rivas, Ivan Garduño, F. Avila-Herrera, Antonio Cerdeira, Marcelo Antonio Pavanello, Israel Mejia, M. A. Quevedo-Lopez
Temperature dependence of the electrical characteristics up to 370 K of amorphous In-Ga-ZnO thin film transistors. Microelectron. Reliab. 56 (2016)
Benito González, Juan Bautista Roldán, Benjamín Iñíguez, Antonio Lázaro, Antonio Cerdeira
DC self-heating effects modelling in SOI and bulk FinFETs. Microelectron. J. 46 (4) (2015)
Esteban Contreras, Antonio Cerdeira, Oscar García-Serrano
Harmonic distortion analysis implementation for the determination of distortion in analog circuits. CCE (2014)
C. Meneses, J. G. Sánchez, Magali Estrada, Antonio Cerdeira, Josep Pallarès, Benjamín Iñíguez, Lluís F. Marsal
Characterization of MIS structures and PTFTs using TiOx deposited by spin-coating. Microelectron. Reliab. 54 (5) (2014)
Muthupandian Cheralathan, Esteban Contreras, Joaquín Alvarado, Antonio Cerdeira, Giuseppe Iannaccone, Enrico Sangiorgi, Benjamín Iñíguez
Implementation of nanoscale double-gate CMOS circuits using compact advanced transport models. Microelectron. J. 44 (2) (2013)
Antonio Cerdeira, Magali Estrada, Blanca S. Soto-Cruz, Benjamín Iñíguez
Modeling the behavior of amorphous oxide thin film transistors before and after bias stress. Microelectron. Reliab. 52 (11) (2012)
Alejandra Castro-Carranza, Magali Estrada, Jairo C. Nolasco, Antonio Cerdeira, Lluís F. Marsal, Benjamín Iñíguez, Josep Pallarès
Organic thin-film transistor bias-dependent capacitance compact model in accumulation regime. IET Circuits Devices Syst. 6 (2) (2012)
Rodrigo Picos, Eugeni García-Moreno, Miquel Roca, Benjamín Iñíguez, Magali Estrada, Antonio Cerdeira
Optimised design of an organic thin-film transistor amplifier using the gm/ID methodology. IET Circuits Devices Syst. 6 (2) (2012)
Magali Estrada, Antonio Cerdeira, Benjamín Iñíguez
Effect of interface charge on the dc bias stress-induced deformation and shift of the transfer characteristic of amorphous oxide thin-film transistors. Microelectron. Reliab. 52 (7) (2012)
S. I. Garduño, Antonio Cerdeira, Magali Estrada
Gate leakage currents modeling for oxynitride gate dielectric in double gate MOSFETs. CCE (2011)
V. S. Balderrama, Magali Estrada, Antonio Cerdeira, Blanca S. Soto-Cruz, Lluís F. Marsal, Josep Pallarès, Jairo C. Nolasco, Benjamín Iñíguez, Emilio Palomares, J. Albero
Influence of P3HT: PCBM blend preparation on the active layer morphology and cell degradation. Microelectron. Reliab. 51 (3) (2011)
Antonio Cerdeira, Magali Estrada, Benjamín Iñíguez, S. Soto
Modeling the subthreshold region of OTFTs. CCE (2011)
J. E. Conde, Antonio Cerdeira
3D structure simulation and proceeding to extract mobility parameters for FinFETs varying channel length. CCE (2010)
Julio C. Tinoco, Magali Estrada, Benjamín Iñíguez, Antonio Cerdeira
Conduction mechanisms of silicon oxide/titanium oxide MOS stack structures. Microelectron. Reliab. 48 (3) (2008)
Rodrigo Trevisoli Doria, Antonio Cerdeira, Jean-Pierre Raskin, Denis Flandre, Marcelo Antonio Pavanello
Harmonic distortion analysis of double gate graded-channel MOSFETs operating in saturation. Microelectron. J. 39 (12) (2008)
Joaquín Alvarado, Antonio Cerdeira, Valeria Kilchytska, Denis Flandre
Harmonic distortion analysis using an improved charge sheet model for PD SOI MOSFETs. Microelectron. J. 38 (3) (2007)
Magali Estrada, Antonio Cerdeira, Luis Reséndiz, Benjamín Iñíguez, Lluís F. Marsal, Josep Pallarès
Effect of localized traps on the anomalous behavior of the transconductance in nanocrystalline TFTs. Microelectron. Reliab. 45 (7-8) (2005)
Magali Estrada, A. Afzalian, Denis Flandre, Antonio Cerdeira, Héctor Báez-Medina, A. de Lucca
FD MOS SOI circuit to enhance the ratio of illuminated to dark current of a co-integrated a-Si: H photodiode. Microelectron. Reliab. 43 (2) (2003)
Rodolfo Zolá García-Lozano, Magali Estrada, Antonio Cerdeira
Effects of impurity concentration, hydrogen plasma process and crystallization temperature on poly-crystalline films obtained from PECVD a-Si: H layers. Microelectron. Reliab. 43 (8) (2003)
Rodolfo Quintero, Antonio Cerdeira, Adelmo Ortiz-Conde
Quasi-three-dimensional spice-based simulation of the transient behavior, including plasma spread, of thyristors and over-voltage protectors. Microelectron. Reliab. 42 (1) (2002)
Adelmo Ortiz-Conde, Francisco J. García-Sánchez, Juin J. Liou, Antonio Cerdeira, Magali Estrada, Y. Yue
A review of recent MOSFET threshold voltage extraction methods. Microelectron. Reliab. 42 (4-5) (2002)
F. S. Lomeli, Antonio Cerdeira
Precise SPICE macromodel applied to high-voltage power MOSFET. Microelectron. Reliab. 42 (1) (2002)
Juin J. Liou, R. Shireen, Adelmo Ortiz-Conde, Francisco J. García-Sánchez, Antonio Cerdeira, Xiaofang Gao, Xuecheng Zou, Ching-Sung Ho
Influence of polysilicon-gate depletion on the subthreshold behavior of submicron MOSFETs. Microelectron. Reliab. 42 (3) (2002)
Magali Estrada, Antonio Cerdeira, Adelmo Ortiz-Conde, Francisco J. García-Sánchez
Determination of trap cross-section in a-Si: H p-i-n diodes parameters using simulation and parameter extraction. Microelectron. Reliab. 41 (4) (2001)