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Temperature dependence of the electrical characteristics up to 370 K of amorphous In-Ga-ZnO thin film transistors.

Magali EstradaM. RivasIvan GarduñoF. Avila-HerreraAntonio CerdeiraMarcelo Antonio PavanelloIsrael MejiaM. A. Quevedo-Lopez
Published in: Microelectron. Reliab. (2016)
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