Influence of polysilicon-gate depletion on the subthreshold behavior of submicron MOSFETs.
Juin J. LiouR. ShireenAdelmo Ortiz-CondeFrancisco J. García-SánchezAntonio CerdeiraXiaofang GaoXuecheng ZouChing-Sung HoPublished in: Microelectron. Reliab. (2002)