Benjamín Iñíguez

Publication Activity (10 Years)

Years Active: 1994-2022
Publications (10 Years): 14

Top Topics

Chemical Vapor Deposition

Analytical Model

Recent Developments

Top Venues

Microelectron. J.

Microelectron. Reliab.

Publications

Christian Roemer, Ghader Darbandy, Mike Schwarz, Jens Trommer, Maik Simon, Andre Heinzig, Thomas Mikolajick, Walter M. Weber, Benjamín Iñíguez, Alexander Kloes
Compact Modeling of Channel-Resistance Effects in Reconfigurable Field-Effect Transistors. MIXDES (2022)
Aristeidis Nikolaou, Jakob Leise, Jakob Pruefer, Ute Zschieschang, Hagen Klauk, Ghader Darbandy, Benjamín Iñíguez, Alexander Kloes
Impact of Mechanical Bending on the Performance of Organic Thin-Film Transistors and the Characteristic Temperature of the Density of States. MIXDES (2022)
Aristeidis Nikolaou, Jakob Leise, Jakob Pruefer, Ute Zschieschang, Hagen Klauk, Ghader Darbandy, Benjamín Iñíguez, Alexander Kloes
Variability-Aware Characterization of Current Mirrors Based on Organic Thin-Film Transistors on Flexible Substrates. MIXDES (2021)
Jakob Prüfer, Jakob Simon Leise, Ghader Darbandy, James W. Borchert, Hagen Klauk, Benjamín Iñíguez, Thomas Gneiting, Alexander Kloes
Analytical Model for Threshold-Voltage Shift in Submicron Staggered Organic Thin-Film Transistors. MIXDES (2019)
Fabian Horst, Atieh Farokhnejad, Benjamín Iñíguez, Alexander Kloes
Closed-Form Modeling Approach of Trap-Assisted Tunneling Current for Use in Compact TFET Models. MIXDES (2019)
Atieh Farokhnejad, Fabian Horst, Benjamín Iñíguez, François Lime, Alexander Kloes
Evaluation of Static/Transient Performance of TFET Inverter Regarding Device Parameters Using a Compact Model. ESSDERC (2019)
Fabian Horst, Atieh Farokhnejad, Benjamín Iñíguez, Alexander Kloes
An Area Equivalent WKB Approach to Calculate the B2B Tunneling Probability for a Numerical Robust Implementation in TFET Compact Models. MIXDES (2018)
Michael Graef, Franziska Hain, Fabian Hosenfeld, Fabian Horst, Atieh Farokhnejad, Benjamín Iñíguez, Alexander Kloes
Analytical modeling of RDF effects on the threshold voltage in short-channel double-gate MOSFETs. MIXDES (2017)
Fabian Hosenfeld, Fabian Horst, Alexander Kloes, Benjamín Iñíguez, François Lime
Non-iterative NEGF based model for band-to-band tunneling current in DG TFETs. MIXDES (2017)
Michael Graef, Franziska Hain, Fabian Hosenfeld, Fabian Horst, Atieh Farokhnejad, Alexander Kloes, Benjamín Iñíguez
Comparative numerical analysis and analytical RDF-modeling of MOSFETs and DG Tunnel-FETs. MIXDES (2016)
Fabian Hosenfeld, Michael Graef, Fabian Horst, Alexander Kloes, Benjamín Iñíguez, François Lime
Modeling approach for rapid NEGF-based simulation of ballistic current in ultra-short DG MOSFETs. MIXDES (2016)
Y. Hernandez-Barrios, F. Avila-Herrera, Magali Estrada, Antonio Cerdeira, Oana Moldovan, Benjamín Iñíguez, Rodrigo Picos
Modeling the variation of threshold voltage, mobility factor and saturation coefficient in amorphous Indium-Gallium-Zinc Oxide thin film transistors. CCE (2016)
Antonio Cerdeira, Magali Estrada, Lluís F. Marsal, Josep Pallarès, Benjamín Iñíguez
On the series resistance in staggered amorphous thin film transistors. Microelectron. Reliab. 63 (2016)
Fabian Horst, Michael Graef, Fabian Hosenfeld, Atieh Farokhnejad, Franziska Hain, Gia Vinh Luong, Qing-Tai Zhao, Benjamín Iñíguez, Alexander Kloes
Implementation of a DC compact model for double-gate Tunnel-FET based on 2D calculations and application in circuit simulation. ESSDERC (2016)
Benito González, Juan Bautista Roldán, Benjamín Iñíguez, Antonio Lázaro, Antonio Cerdeira
DC self-heating effects modelling in SOI and bulk FinFETs. Microelectron. J. 46 (4) (2015)
Oana Moldovan, Benjamín Iñíguez, M. Jamal Deen, Lluís F. Marsal
Graphene electronic sensors - review of recent developments and future challenges. IET Circuits Devices Syst. 9 (6) (2015)
Oana Moldovan, François Lime, Benjamín Iñíguez
A complete and Verilog-A compatible Gate-All-Around long-channel junctionless MOSFET model implemented in CMOS inverters. Microelectron. J. 46 (11) (2015)
Thomas Holtij, Michael Graef, Alexander Kloes, Benjamín Iñíguez
3-D compact model for nanoscale junctionless triple-gate nanowire MOSFETs. ESSDERC (2014)
Thomas Holtij, Michael Graef, Alexander Kloes, Benjamín Iñíguez
Modeling and performance study of nanoscale double gate junctionless and inversion mode MOSFETs including carrier quantization effects. Microelectron. J. 45 (9) (2014)
Michael Graef, Thomas Holtij, Franziska Hain, Alexander Kloes, Benjamín Iñíguez
Improved analytical potential modeling in double-gate tunnel-FETs. MIXDES (2014)
C. Meneses, J. G. Sánchez, Magali Estrada, Antonio Cerdeira, Josep Pallarès, Benjamín Iñíguez, Lluís F. Marsal
Characterization of MIS structures and PTFTs using TiOx deposited by spin-coating. Microelectron. Reliab. 54 (5) (2014)
Michael Graef, Thomas Holtij, Franziska Hain, Alexander Kloes, Benjamín Iñíguez
A 2D closed form model for the electrostatics in hetero-junction double-gate tunnel-FETs for calculation of band-to-band tunneling current. Microelectron. J. 45 (9) (2014)
F. M. Yigletu, Benjamín Iñíguez, Sourabh Khandelwal, Tor A. Fjeldly
A compact charge-based physical model for AlGaN/GaN HEMTs. WiSNet (2013)
Michael Graef, Thomas Holtij, Franziska Hain, Alexander Kloes, Benjamín Iñíguez
Two-dimensional physics-based modeling of electrostatics and band-to-band tunneling in tunnel-FETs. MIXDES (2013)
Thomas Holtij, Michael Graef, Franziska Hain, Alexander Kloes, Benjamín Iñíguez
Unified charge model for short-channel junctionless double gate MOSFETs. MIXDES (2013)
F. M. Yigletu, Benjamín Iñíguez, Sourabh Khandelwal, Tor A. Fjeldly
A compact charge-based physical model for AlGaN/GaN HEMTs. RWS (2013)
Muthupandian Cheralathan, Esteban Contreras, Joaquín Alvarado, Antonio Cerdeira, Giuseppe Iannaccone, Enrico Sangiorgi, Benjamín Iñíguez
Implementation of nanoscale double-gate CMOS circuits using compact advanced transport models. Microelectron. J. 44 (2) (2013)
Antonio Cerdeira, Magali Estrada, Blanca S. Soto-Cruz, Benjamín Iñíguez
Modeling the behavior of amorphous oxide thin film transistors before and after bias stress. Microelectron. Reliab. 52 (11) (2012)
Alejandra Castro-Carranza, Magali Estrada, Jairo C. Nolasco, Antonio Cerdeira, Lluís F. Marsal, Benjamín Iñíguez, Josep Pallarès
Organic thin-film transistor bias-dependent capacitance compact model in accumulation regime. IET Circuits Devices Syst. 6 (2) (2012)
Rodrigo Picos, Eugeni García-Moreno, Miquel Roca, Benjamín Iñíguez, Magali Estrada, Antonio Cerdeira
Optimised design of an organic thin-film transistor amplifier using the gm/ID methodology. IET Circuits Devices Syst. 6 (2) (2012)
Magali Estrada, Antonio Cerdeira, Benjamín Iñíguez
Effect of interface charge on the dc bias stress-induced deformation and shift of the transfer characteristic of amorphous oxide thin-film transistors. Microelectron. Reliab. 52 (7) (2012)
V. S. Balderrama, Magali Estrada, Antonio Cerdeira, Blanca S. Soto-Cruz, Lluís F. Marsal, Josep Pallarès, Jairo C. Nolasco, Benjamín Iñíguez, Emilio Palomares, J. Albero
Influence of P3HT: PCBM blend preparation on the active layer morphology and cell degradation. Microelectron. Reliab. 51 (3) (2011)
Antonio Cerdeira, Magali Estrada, Benjamín Iñíguez, S. Soto
Modeling the subthreshold region of OTFTs. CCE (2011)
Julio C. Tinoco, Magali Estrada, Benjamín Iñíguez, Antonio Cerdeira
Conduction mechanisms of silicon oxide/titanium oxide MOS stack structures. Microelectron. Reliab. 48 (3) (2008)
Benjamín Iñíguez, Antonio Lázaro, Hamdy Abd Elhamid, Oana Moldovan, Bogdan Nae, Jaume Roig, David Jiménez
Charge-Based Compact Modeling of Multiple-Gate MOSFET. CICC (2007)
S. Kolberg, Tor A. Fjeldly, Benjamín Iñíguez
Self-consistent 2D Compact Model for Nanoscale Double Gate MOSFETs. International Conference on Computational Science (4) (2006)
Magali Estrada, Antonio Cerdeira, Luis Reséndiz, Benjamín Iñíguez, Lluís F. Marsal, Josep Pallarès
Effect of localized traps on the anomalous behavior of the transconductance in nanocrystalline TFTs. Microelectron. Reliab. 45 (7-8) (2005)
Eugeni García-Moreno, Benjamín Iñíguez, Miquel Roca, Jaume Segura, Eugeni Isern
Clocked Dosimeter Compatible with Digital CMOS Technology. J. Electron. Test. 12 (1-2) (1998)
Benjamín Iñíguez, Eugeni García-Moreno
-continuous small-signal model for a MOS transistor in normal operation. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 14 (2) (1995)
Benjamín Iñíguez, Eugeni García-Moreno
Development of a Cinfinty-Continuous Small-Signal Model for a MOS Transistor. ISCAS (1994)