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Analytical modeling of RDF effects on the threshold voltage in short-channel double-gate MOSFETs.
Michael Graef
Franziska Hain
Fabian Hosenfeld
Fabian Horst
Atieh Farokhnejad
Benjamín Iñíguez
Alexander Kloes
Published in:
MIXDES (2017)
Keyphrases
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field effect transistors
high density
steady state
mathematical analysis
low voltage
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power losses
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