Alexander Kloes

Publication Activity (10 Years)

Years Active: 2013-2023
Publications (10 Years): 20

Top Topics

Semiconductor Devices

Top Venues

Microelectron. J.

Publications

Alexander Kloes, Mike Schwarz, Yi Han, Qing-Tai Zhao, Christian Römer
Comparison between WKB and Wavelet Approach for Analytical Calculation of Tunneling Currents in Schottky Barrier Field-Effect Transistors. MIXDES (2023)
Mike Schwarz, Ghader Darbandy, Christian Römer, Nadine Dersch, Alexander Kloes
Simulation and Modeling of Silicon Semiconductor Devices and Sensors. MIXDES (2023)
Nicolas Bogun, Emilio Pérez-Bosch Quesada, Eduardo Pérez, Christian Wenger, Alexander Kloes, Mike Schwarz
Analytical Calculation of Inference in Memristor-based Stochastic Artificial Neural Networks. MIXDES (2022)
Christian Roemer, Ghader Darbandy, Mike Schwarz, Jens Trommer, Maik Simon, Andre Heinzig, Thomas Mikolajick, Walter M. Weber, Benjamín Iñíguez, Alexander Kloes
Compact Modeling of Channel-Resistance Effects in Reconfigurable Field-Effect Transistors. MIXDES (2022)
Aristeidis Nikolaou, Jakob Leise, Jakob Pruefer, Ute Zschieschang, Hagen Klauk, Ghader Darbandy, Benjamín Iñíguez, Alexander Kloes
Impact of Mechanical Bending on the Performance of Organic Thin-Film Transistors and the Characteristic Temperature of the Density of States. MIXDES (2022)
Aristeidis Nikolaou, Jakob Leise, Jakob Pruefer, Ute Zschieschang, Hagen Klauk, Ghader Darbandy, Benjamín Iñíguez, Alexander Kloes
Variability-Aware Characterization of Current Mirrors Based on Organic Thin-Film Transistors on Flexible Substrates. MIXDES (2021)
Ghader Darbandy, Christian Roemer, Jakob Leise, Jakob Pruefer, James W. Borchert, Hagen Klauk, Alexander Kloes
Characterization of the Charge-Trap Dynamics in Organic Thin-Film Transistors. MIXDES (2019)
Jakob Prüfer, Jakob Simon Leise, Ghader Darbandy, James W. Borchert, Hagen Klauk, Benjamín Iñíguez, Thomas Gneiting, Alexander Kloes
Analytical Model for Threshold-Voltage Shift in Submicron Staggered Organic Thin-Film Transistors. MIXDES (2019)
Fabian Horst, Atieh Farokhnejad, Benjamín Iñíguez, Alexander Kloes
Closed-Form Modeling Approach of Trap-Assisted Tunneling Current for Use in Compact TFET Models. MIXDES (2019)
Atieh Farokhnejad, Fabian Horst, Benjamín Iñíguez, François Lime, Alexander Kloes
Evaluation of Static/Transient Performance of TFET Inverter Regarding Device Parameters Using a Compact Model. ESSDERC (2019)
Fabian Horst, Atieh Farokhnejad, Benjamín Iñíguez, Alexander Kloes
An Area Equivalent WKB Approach to Calculate the B2B Tunneling Probability for a Numerical Robust Implementation in TFET Compact Models. MIXDES (2018)
Mike Schwarz, Laurie E. Calvet, John P. Snyder, Tillmann Krauss, Udo Schwalke, Alexander Kloes
Process and Device Simulation of Schottky Barrier MOSFETs for Analysis of Current Injection. MIXDES (2018)
Mike Schwarz, John P. Snyder, Tillmann Krauss, Udo Schwalke, Laurie E. Calvet, Alexander Kloes
Simulation framework for barrier lowering in Schottky barrier MOSFETs. MIXDES (2017)
Michael Graef, Franziska Hain, Fabian Hosenfeld, Fabian Horst, Atieh Farokhnejad, Benjamín Iñíguez, Alexander Kloes
Analytical modeling of RDF effects on the threshold voltage in short-channel double-gate MOSFETs. MIXDES (2017)
Fabian Hosenfeld, Fabian Horst, Alexander Kloes, Benjamín Iñíguez, François Lime
Non-iterative NEGF based model for band-to-band tunneling current in DG TFETs. MIXDES (2017)
Mike Schwarz, Alexander Kloes
Analysis and 2D analytical modeling of III-V Schottky barrier Double-Gate MOSFETs. MIXDES (2016)
Michael Graef, Franziska Hain, Fabian Hosenfeld, Fabian Horst, Atieh Farokhnejad, Alexander Kloes, Benjamín Iñíguez
Comparative numerical analysis and analytical RDF-modeling of MOSFETs and DG Tunnel-FETs. MIXDES (2016)
Fabian Hosenfeld, Michael Graef, Fabian Horst, Alexander Kloes, Benjamín Iñíguez, François Lime
Modeling approach for rapid NEGF-based simulation of ballistic current in ultra-short DG MOSFETs. MIXDES (2016)
Fabian Horst, Michael Graef, Fabian Hosenfeld, Atieh Farokhnejad, Franziska Hain, Gia Vinh Luong, Qing-Tai Zhao, Benjamín Iñíguez, Alexander Kloes
Implementation of a DC compact model for double-gate Tunnel-FET based on 2D calculations and application in circuit simulation. ESSDERC (2016)
Atieh Farokhnejad, Michael Graef, Alexander Kloes
Wavelet-based calculation of the transmission coefficient for tunneling events in Tunnel-FETs. MIXDES (2015)
Thomas Holtij, Michael Graef, Alexander Kloes, Benjamín Iñíguez
3-D compact model for nanoscale junctionless triple-gate nanowire MOSFETs. ESSDERC (2014)
Thomas Holtij, Michael Graef, Alexander Kloes, Benjamín Iñíguez
Modeling and performance study of nanoscale double gate junctionless and inversion mode MOSFETs including carrier quantization effects. Microelectron. J. 45 (9) (2014)
Michael Graef, Thomas Holtij, Franziska Hain, Alexander Kloes, Benjamín Iñíguez
Improved analytical potential modeling in double-gate tunnel-FETs. MIXDES (2014)
Michael Graef, Thomas Holtij, Franziska Hain, Alexander Kloes, Benjamín Iñíguez
A 2D closed form model for the electrostatics in hetero-junction double-gate tunnel-FETs for calculation of band-to-band tunneling current. Microelectron. J. 45 (9) (2014)
Michael Graef, Thomas Holtij, Franziska Hain, Alexander Kloes, Benjamín Iñíguez
Two-dimensional physics-based modeling of electrostatics and band-to-band tunneling in tunnel-FETs. MIXDES (2013)
Thomas Holtij, Michael Graef, Franziska Hain, Alexander Kloes, Benjamín Iñíguez
Unified charge model for short-channel junctionless double gate MOSFETs. MIXDES (2013)