Tillmann Krauss

Publication Activity (10 Years)

Years Active: 2012-2018
Publications (10 Years): 5

Top Topics

Cmos Technology

Delay Insensitive

Schottky Barrier

Top Venues

Microelectron. J.

Publications

Tillmann Krauss, Frank Wessely, Udo Schwalke
Reconfigurable electrostatically doped 2.5-gate planar field-effect transistors for dopant-free CMOS. DTIS (2018)
Mike Schwarz, Laurie E. Calvet, John P. Snyder, Tillmann Krauss, Udo Schwalke, Alexander Kloes
Process and Device Simulation of Schottky Barrier MOSFETs for Analysis of Current Injection. MIXDES (2018)
Mike Schwarz, John P. Snyder, Tillmann Krauss, Udo Schwalke, Laurie E. Calvet, Alexander Kloes
Simulation framework for barrier lowering in Schottky barrier MOSFETs. MIXDES (2017)
Tillmann Krauss, Frank Wessely, Udo Schwalke
Fabrication and simulation of electrically reconfigurable dual metal-gate planar field-effect transistors for dopant-free CMOS. DTIS (2017)
Tillmann Krauss, Frank Wessely, Udo Schwalke
Electrically reconfigurable dual metal-gate planar field-effect transistor for dopant-free CMOS. SSD (2016)
Tillmann Krauss, Frank Wessely, Udo Schwalke
An electrostatically doped planar device concept. DTIS (2014)
Udo Schwalke, Frank Wessely, Tillmann Krauss
Simulation and experimental verification: Dopant-free Si-nanowire CMOS technology on silicon-on-insulator material. IDT (2013)
Frank Wessely, Tillmann Krauss, Udo Schwalke
Reconfigurable CMOS with undoped silicon nanowire midgap Schottky-barrier FETs. Microelectron. J. 44 (12) (2013)
Frank Wessely, Tillmann Krauss, Udo Schwalke
Dopant-free CMOS: A new device concept. DTIS (2012)