Udo Schwalke

Publication Activity (10 Years)

Years Active: 2001-2020
Publications (10 Years): 14

Top Topics

Atomic Force Microscopy

Schottky Barrier

Silicon Nitride

Top Venues

Publications

Maximilian Reuter, Johannes Pfau, Tillmann A. Krauss, Mahdi Moradinasab, Udo Schwalke, Jürgen Becker, Klaus Hofmann
Towards Ambipolar Planar Devices: The DeFET Device in Area Constrained XOR Applications. LASCAS (2020)
Fatemeh Safari, Mahdi Moradinasab, M. Fathipour, Udo Schwalke
The transport and optical sensing properties of Blue Phosphorene: A First-Principles Study. DTIS (2019)
Maximilian Reuter, Tillmann A. Krauss, Mahdi Moradinasab, Johannes Pfau, Udo Schwalke, Jürgen Becker, Klaus Hofmann
From MOSFETs to Ambipolar Transistors: A Static DeFET Inverter Cell for SOI. APCCAS (2019)
Dennis Noll, Udo Schwalke
Reliability issues and length dependence of nanocrystalline graphene field-effect transistors for gas sensing. DTIS (2019)
Tillmann Krauss, Frank Wessely, Udo Schwalke
Reconfigurable electrostatically doped 2.5-gate planar field-effect transistors for dopant-free CMOS. DTIS (2018)
Dennis Noll, Udo Schwalke
Ammonia sensors based on in situ fabricated nanocrystalline graphene field-effect devices. DTIS (2018)
Mike Schwarz, Laurie E. Calvet, John P. Snyder, Tillmann Krauss, Udo Schwalke, Alexander Kloes
Process and Device Simulation of Schottky Barrier MOSFETs for Analysis of Current Injection. MIXDES (2018)
Mike Schwarz, John P. Snyder, Tillmann Krauss, Udo Schwalke, Laurie E. Calvet, Alexander Kloes
Simulation framework for barrier lowering in Schottky barrier MOSFETs. MIXDES (2017)
Dennis Noll, Udo Schwalke
Feasibility study of in-situ grown nanocrystalline graphene for humidity sensing. DTIS (2017)
Tillmann Krauss, Frank Wessely, Udo Schwalke
Fabrication and simulation of electrically reconfigurable dual metal-gate planar field-effect transistors for dopant-free CMOS. DTIS (2017)
Dennis Noll, Udo Schwalke
PMMA-enhancement of the lateral growth of transfer-free in situ CCVD grown graphene. SSD (2016)
Tillmann Krauss, Frank Wessely, Udo Schwalke
Electrically reconfigurable dual metal-gate planar field-effect transistor for dopant-free CMOS. SSD (2016)
Dennis Noll, Udo Schwalke
Investigation of transfer-free catalytic CVD graphene on SiO2 by means of conductive atomic force microscopy. DTIS (2016)
Dennis Noll, Udo Schwalke
Silicon CMOS compatible in situ CCVD growth of graphene on silicon nitride. DTIS (2015)
Pia Juliane Wessely, Udo Schwalke
2nd generation bilayer graphene transistors for applications in nanoelectronics. DTIS (2014)
Tillmann Krauss, Frank Wessely, Udo Schwalke
An electrostatically doped planar device concept. DTIS (2014)
Martin Keyn, Andreas Kramer, Udo Schwalke
Dependence of annealing temperature on cluster formation during in situ growth of CNTs. DTIS (2014)
Martin Keyn, Udo Schwalke
Multi-CNTFETs for power device applications: Investigation of CCVD grown CNTs by means of atomic force microscopy. DTIS (2013)
Udo Schwalke, Frank Wessely, Tillmann Krauss
Simulation and experimental verification: Dopant-free Si-nanowire CMOS technology on silicon-on-insulator material. IDT (2013)
Udo Schwalke
The future of nanoelectronics is black: From silicon to hexagonal carbon. AFRICON (2013)
Frank Wessely, Tillmann Krauss, Udo Schwalke
Reconfigurable CMOS with undoped silicon nanowire midgap Schottky-barrier FETs. Microelectron. J. 44 (12) (2013)
Pia Juliane Wessely, Udo Schwalke
Transfer-free grown bilayer graphene memory devices. DTIS (2013)
Pia Juliane Wessely, Frank Wessely, Emrah Birinci, Udo Schwalke, Bernadette Riedinger
On/off-current ratios of transfer-free bilayer graphene FETs as a function of temperature. DTIS (2012)
Martin Keyn, Pia Juliane Wessely, Frank Wessely, Lorraine Rispal, Johannes Palm, Udo Schwalke
Feasibility study on in situ CCVD grown CNTs for field-effect power device applications. DTIS (2012)
Frank Wessely, Tillmann Krauss, Udo Schwalke
Dopant-free CMOS: A new device concept. DTIS (2012)
Udo Schwalke, Pia Juliane Wessely, Frank Wessely, Martin Keyn, Lorraine Rispal
Nanoelectronics: From silicon to graphene. DTIS (2012)
Udo Schwalke
Novel Field-Effect Controlled Single-Walled Carbon Nanotube Network Devices for Biomedical Sensor Applications. BIODEVICES (2) (2008)
Ralf Endres, Yordan Stefanov, Udo Schwalke
gate dielectric MOSFETs fabricated by damascene metal gate technology. Microelectron. Reliab. 47 (4-5) (2007)
Udo Schwalke, Yordan Stefanov
Process integration and nanometer-scale electrical characterization of crystalline high-k gate dielectrics. Microelectron. Reliab. 45 (5-6) (2005)
Udo Schwalke
Progress in device isolation technology. Microelectron. Reliab. 41 (4) (2001)
Udo Schwalke, Martin Pölzl, Thomas Sekinger, Martin Kerber
Ultra-thick gate oxides: charge generation and its impact on reliability. Microelectron. Reliab. 41 (7) (2001)