gate dielectric MOSFETs fabricated by damascene metal gate technology.
Ralf EndresYordan StefanovUdo SchwalkePublished in: Microelectron. Reliab. (2007)
Keyphrases
- cmos technology
- low voltage
- integrated circuit
- field effect transistors
- metal oxide semiconductor
- low power
- high density
- power consumption
- silicon dioxide
- high speed
- nm technology
- steady state
- leakage current
- gate insulator
- parallel processing
- low cost
- nano scale
- image sensor
- electron beam
- technological advances
- image processing
- cost effective
- case study